Skip to main content
SpringerLink
Log in

Low Temperature Photoluminescence of SiC: A Method for Material Characterization and the Influence of an Uniaxial Stress on the Spectra

  • Conference paper
Amorphous and Crystalline Silicon Carbide IV

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 71))

Abstract

Photoluminescence spectra of SiC at 1.9K were investigated. Different polytypes and p- or n-type dopants in the crystals can be determined. Specific lines for N-, Ti- and Al- correlated defects can be observed. The line shape and the intensity ratio of special lines are correlated to the quality of the crystals. After ion implantation a series of characteristic lines for different polytypes are visible.

To obtain a better understanding of the recombination mechanism an external uniaxial stress (up to 3 GPa) was applied to the samples. The different recombination lines show a specific behavior: some of them shift to longer wavelengths, some other to shorter wavelengths and some of them split with an uniaxial stress in [11\(\bar 2\)0]-direction.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution
Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 84.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 109.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. W. J.Choyke, L. Patrick, Proc. of the Third Int.Conf. on Silicon Carbide, Miami Beach (1973) p. 261

    Google Scholar 

  2. G. Ziegler etal., IEEE Trans. ED-30, 277 (1983)

    Google Scholar 

  3. S. Karmann etal., Verhandl. DPG (VI) 26, 1156 (1991)

    Google Scholar 

  4. W. v. Münch, J. Electrochem. Soc. 122. 642 (1975)

    Article  Google Scholar 

  5. P. J. Dean etal., Proc. Int. Conf. on Defects … in Semicond., Nice 1978, publ. London 1979, p. 447

    Google Scholar 

  6. C. Haberstroh, to be published

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Institut für Angewandte Physik, Universität Erlangen-Nürnberg, Staudtstr. 7, W-8520, Erlangen, Fed. Rep. of Germany

    Ch. Haberstroh & R. Helbig

  2. Research Laboratories, Siemens AG, Scharowskystr., W-8520, Erlangen, Fed. Rep. of Germany

    S. Leibenzeder

Authors
  1. Ch. Haberstroh
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. R. Helbig
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. S. Leibenzeder
    View author publications

    You can also search for this author in PubMed Google Scholar

Editor information

Editors and Affiliations

  1. Microelectronics Laboratory, Santa Clara University, 95053, Santa Clara, CA, USA

    Cary Y. Yang  & M. Mahmudur Rahman  & 

  2. School of Engineering, Howard University, 20059, Washington, DC, USA

    Gary L. Harris

Rights and permissions

Reprints and permissions

Copyright information

© 1992 Springer-Verlag Berlin Heidelberg

About this paper

Cite this paper

Haberstroh, C., Helbig, R., Leibenzeder, S. (1992). Low Temperature Photoluminescence of SiC: A Method for Material Characterization and the Influence of an Uniaxial Stress on the Spectra. In: Yang, C.Y., Rahman, M.M., Harris, G.L. (eds) Amorphous and Crystalline Silicon Carbide IV. Springer Proceedings in Physics, vol 71. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84804-9_33

Download citation

  • DOI: https://doi.org/10.1007/978-3-642-84804-9_33

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-84806-3

  • Online ISBN: 978-3-642-84804-9

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics

Search

Navigation