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STT-Based Non-Volatile Logic-in-Memory Framework

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Field-Coupled Nanocomputing

Part of the book series: Lecture Notes in Computer Science ((LNTCS,volume 8280))

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Abstract

This work describes an integration of logic within the Spin Transfer Torque Magnetoresistive RAM (STT-MRAM) framework. For memory, a minimum separation between the cells is required to ensure bit-to-bit independency. For logic that relies on magnetostatic coupling, a maximum separation is allowed between magnetic cells for effective computation. Integration of the two functionalities therefore requires meeting the orthogonal spatial needs of separation. In this work the technological challenges of this integration are first described followed by the specifications of the new STT-MRAM based logic-in-memory architecture. How a spin transfer torque based control, also called clock, can tune the architecture between logic and memory modes is next described. A reference free variability tolerant differential read scheme leveraging the integration is presented. This logic-in-memory framework is also an integration between magnetic and CMOS planes. Finally, a logic partitioning between the two planes is described that can significantly improve the performance metrics.

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Acknowledgement

This work is partially supported by NSF Career Award CCF (0639624), NSF EMT/Nano CCF (0824838), NSF CRI (0551621) and USF Presidential Doctoral Fellowship.

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Authors and Affiliations

  1. University of South Florida, Tampa, FL, USA

    Jayita Das & Sanjukta Bhanja

  2. Everspin Technologies Inc., Austin, TX, USA

    Syed M. Alam

Authors
  1. Jayita Das
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  2. Syed M. Alam
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  3. Sanjukta Bhanja
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Correspondence to Jayita Das .

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Editors and Affiliations

  1. University of Massachusetts Amherst, Amherst, Massachusetts, USA

    Neal G. Anderson

  2. University of South Florida, Tampa, Florida, USA

    Sanjukta Bhanja

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Das, J., Alam, S.M., Bhanja, S. (2014). STT-Based Non-Volatile Logic-in-Memory Framework. In: Anderson, N., Bhanja, S. (eds) Field-Coupled Nanocomputing. Lecture Notes in Computer Science(), vol 8280. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-43722-3_8

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  • DOI: https://doi.org/10.1007/978-3-662-43722-3_8

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  • Online ISBN: 978-3-662-43722-3

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