Abstract
As the technologies scale down into the nanometer range, the transistor leakage currents become a major concern. To overcome this problem, advanced control methods are mandatory, especially for circuits such as memories.
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References
F. Hamzaoglu et al., Analysis of dual-Vt SRAM cells with full-swing single-ended bit line sensing for on-chip cache, IEEE TVLSI Systems 10, Apr 2002
N. Azizi et al., Low-leakage asymmetric-cell SRAM, IEEE VSLI Systems 11(4), Aug 2003
A. Agarwal et al., DRG-cache: A data retention gated-ground cache for low power, DAC, June 2002, pp. 473–478
K. Nii et al., A 90-nm low-power 32-kB embedded SRAM with gate leakage suppression circuit for mobile applications, IEEE JSSC 39(4), Apr 2004
O. Thomas et al., Impact of CMOS technology scaling on SRAM standby leakage reduction techniques, ICICDT, May 2006
S. Mukhopadhyay et al., Modeling and estimation of total leakage current in nano-scaled -CMOS devices considering the effect of parameter variation, ISPLED, Aug 2003
T.Y. Chan et al., The impact of gate-induced drain leakage current on MOSFET scaling, IEDM, Dec 1987
BSIM 4 user manual
K. Bernstein, N.J. Rohrer, SOI Circuit Design Concepts. Kluwer 2000
O. Thomas et al. Sub-1V, robust and compact 6T SRAM cell in double gate MOS technology, ISCASS, May 2007
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Thomas, O., Belleville, M., Ferrant, R. (2010). SRAM Memory Cell Leakage Reduction Design Techniques in 65 nm Low Power PD-SOI CMOS. In: Amara, A., Ea, T., Belleville, M. (eds) Emerging Technologies and Circuits. Lecture Notes in Electrical Engineering, vol 66. Springer, Dordrecht. https://doi.org/10.1007/978-90-481-9379-0_10
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DOI: https://doi.org/10.1007/978-90-481-9379-0_10
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