Abstract
Chapter 7 presents the major conclusions of this book as well as an outlook and suggestions for continued research.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
B. Benbakhti, E. Towie, K. Kalna, G. Hellings, G. Eneman, K. De Meyer, M. Meuris, A. Asenov, Monte Carlo analysis of In0.53Ga0.47As implant-free quantum-well device performance, in Silicon Nanoelectronics Workshop Proc. (2010), pp. 17–18
Intel corporation, Intel 22nm 3-D Tri-Gate Transistor Technology (2011). http://newsroom.intel.com/docs/DOC-2032.pdf
G.E. Moore, Cramming more components onto integrated circuits. Electronics 38, 8 (1965). http://download.intel.com/museum/Moores_Law/Articles-Press_releases/Gordon_Moore_1965_Article.pdf
P. Van Der Voorn, M. Agostinelli, S. Choi, G. Curello, H. Deshpande, M.A. El-Tanani, W. Hafez, U. Jalan, L. Janbay, M. Kang, K. Koh, K. Komeyli, H. Lakdawala, J. Lin, N. Lindert, S. Mudanai, J. Park, K. Phoa, A. Rahman, J. Rizk, L. Rockford, G. Sacks, K. Soumyanath, H. Tashiro, S. Taylor, C. Tsai, H. Xu, J. Xu, L. Yang, I. Young, J. Yeh, J. Yip, P. Bai, C. Jan, A 32nm low power RF CMOS SOC technology featuring high-k/metal gate, in Symposium on VLSI Technology (2010), pp. 137–138
Author information
Authors and Affiliations
Rights and permissions
Copyright information
© 2013 Springer Science+Business Media Dordrecht
About this chapter
Cite this chapter
Hellings, G., De Meyer, K. (2013). Conclusions Future Work and Outlook. In: High Mobility and Quantum Well Transistors. Springer Series in Advanced Microelectronics, vol 42. Springer, Dordrecht. https://doi.org/10.1007/978-94-007-6340-1_7
Download citation
DOI: https://doi.org/10.1007/978-94-007-6340-1_7
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-007-6339-5
Online ISBN: 978-94-007-6340-1
eBook Packages: EngineeringEngineering (R0)