Abstract
There has been a considerable progress in the photoluminescence (PL) properties investigations of SiGe/Si and Ge/Si structures of late. The PL investigations of Ge-Ge1-xSix structures with quantum wells in germanium layers have been started recently1,2. This work reports the studies of the exciton and magnetoexciton luminescence of Ge-Ge1-xSix heterostructures grown by CVD method on Ge [111] substrates.
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References
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© 1996 Kluwer Academic Publishers
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Kalugin, N.G., Orlov, L.K., Kuznetzov, O.A., Timofeev, V.B., Chernenko, A.V. (1996). Exciton and Magnetoexciton Luminescence in Ge-Ge1-xSix Multiple Quantum Well Structures. In: Balkanski, M. (eds) Devices Based on Low-Dimensional Semiconductor Structures. NATO ASI Series, vol 14. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-0289-3_6
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DOI: https://doi.org/10.1007/978-94-009-0289-3_6
Publisher Name: Springer, Dordrecht
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