Abstract
Experimental data on metal-semiconductor interfaces are reexamined. It is found that the previously reported abrupt transition between covalent and ionic semiconductors is not that clearly defined and the outcome is diffused by data scattering. Furthermore, the data indicate nosaturation of the interface parameter Sfor S= 1. Considering the definition of S, it follows that the true Schottky limit should occur for some number S≈: 2.0-3.0 rather than for exactly S= 1 as previously claimed.
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© 1990 Editorial Jaca Book spa, Milano
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Schlütcr, M. (1990). Chemical trends in metal-semiconductor barrier heights. In: Mönch, W. (eds) Electronic Structure of Metal-Semiconductor Contacts. Perspectives in Condensed Matter Physics, vol 4. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-0657-0_15
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DOI: https://doi.org/10.1007/978-94-009-0657-0_15
Publisher Name: Springer, Dordrecht
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