Abstract
We identify the physical origin of the excess capacitance at Schottky diodes without an interfacial layer, i.e., intimate Schottky contacts. Measured capacitance in excess of the space-charge capacitance is shown to be caused by the injection of minority carriers into the bulk semiconductor, rather than by the presence of interface states, as previously thought. Minority-carrier injection depends sensitively on the properties of the Ohmic back-contact.
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© 1990 Editorial Jaca Book spa, Milano
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Werner, J., Levi, A.F.J., Tung, R.T., Anzlowar, M., Pinto, M. (1990). Origin of the Excess Capacitance at Intimate Schottky Contacts. In: Mönch, W. (eds) Electronic Structure of Metal-Semiconductor Contacts. Perspectives in Condensed Matter Physics, vol 4. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-0657-0_33
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DOI: https://doi.org/10.1007/978-94-009-0657-0_33
Publisher Name: Springer, Dordrecht
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