Skip to main content
SpringerLink
Log in

SiGe/Si Superlattices: Strain Influence and Devices

  • Chapter
Heterostructures on Silicon: One Step Further with Silicon

Part of the book series: NATO ASI Series ((NSSE,volume 160))

Abstract

SiGe/Si superlattices are a promising material for a silicon based integration of conventional integrated circuits with heterojunction devices. Si and Ge are lattice mismatched by 4.2%. This paper describes conditions for stable superlattice growth and explains methods for strain adjustment in the superlattice. Devices are described and essential results given. Ultrathin superlattices and their potential for observation of zone folding effects are mentioned.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution
Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 39.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 54.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. R People and JC Bean: Appl. Phys. Lett. 47, 322 (1985), Erratum: Appl. Phys. Lett. 49, 229 (1986)

    ADS  Google Scholar 

  2. E Kasper: Surf. Sei. 174, 630 (1986)

    Article  ADS  Google Scholar 

  3. JY Tsao, BW Dodson, ST Picraux and DM Cornelison: Phys. Rev. Lett. 59, 2455 (1987)

    Article  ADS  Google Scholar 

  4. E Kasper, H-J Herzog and H Kibbel: Appl. Phys. 8, 199 (1975)

    Article  ADS  Google Scholar 

  5. JC Bean, LC Feldman, AT Fiory, S Nakahara and IK Robinson: J. Vac. Sei. Technol. A2, 436 (1984)

    Article  ADS  Google Scholar 

  6. TP Pearsall, J Bevk, LC Feldman, JM Bonar and JP Mannaerts: Phys. Rev. Lett. 58, 729 (1987)

    Article  ADS  Google Scholar 

  7. E Kasper, H-J Herzog, H Dämbkes and G Abstreiter: Mat. Res. Soc. Proc. Vol. 56, ed. by JM Gibson, GC Osbourne and RM Tromp: p. 347, Mat. Res. Soc., Pittsburgh (1986)

    Google Scholar 

  8. E Kasper, H-J Herzog, H Jorke and G Abstreiter: Superlattices and Microstructures 3, 141 (1987)

    Article  ADS  Google Scholar 

  9. G Abstreiter, H Brugger, T Wolf, H Jorke and H-J Herzog: Phys. Rev. Lett. 54, 2441 (1985)

    Google Scholar 

  10. E Kasper, H Kibbel, H Jorke, H Brugger, E Frieß and G Abstreiter: to be published

    Google Scholar 

  11. S Luryi, A Kastalsky and JC Bean: IEEE Trans. ED-31, 1135 (1984)

    Google Scholar 

  12. TP Pearsall, JC Bean, R People and AT Fiory: Proc. 1st Int. Symp. Si-MBE, ed. by JC Bean: Electrochem. Soc. Proc. Vol. 85–7, Pennington, N.J. (1985), p. 400 and TP Pearsall and JC Bean: Appl. Phys. Lett. 48, 538 (1986)

    Google Scholar 

  13. H Dämbkes, H-J Herzog, H Jorke, H Kibbel and E Kasper: IEEE Trans. ED-33, 633 (1986)

    Google Scholar 

  14. H Temkin, TP Pearsall, JC Bean, RA Logan and S Luryi: Appl. Phys. Lett. 48, 963 (1986) and S Luryi, TP Pearsall, H Temkin and JC Bean: IEEE EDL-7, 104 (1986)

    Google Scholar 

  15. TP Pearsall, H Temkin, JC Bean and S Luryi: IEEE EDL-7, 330 (1986)

    Google Scholar 

  16. SS Iyer, GL Patton, SL Delage, S Tiwari and JMC Stork: Proc. 2nd Int. Symp. Si-MBE, ed. by JC Bean and L Schowalter: Electrochem. Soc., Pennington, N.J. (1988), p. 114 and S.S. Iyer: IEEE Trans. MTT (1988)

    Google Scholar 

  17. H. Dämbkes: same Proc. as /16/, p. 15

    Google Scholar 

  18. T Tatsumi, H Hirayama and N Aizaki: Appl. Phys. Lett. 52, 895 (1988)

    Article  ADS  Google Scholar 

  19. HC Liu, D Landheer, M Buchanan and DC Houghton, to be published

    Google Scholar 

  20. J-F Luy, H Jorke, A Casel and E Kasper: results presented at ITG Diskussionssitzung “Heterostruktur-Bauelemente”, Bad Soden, April 88, will be published

    Google Scholar 

  21. S Luryi and SM Sze, Possible Device Application of Si-MBE, in Si-MBE, ed by E Kasper and JC Bean: CRC Press, Boca Raton (USA), 1988

    Google Scholar 

  22. R People: Phys. Rev. B32, 1405 (1985)

    Article  ADS  Google Scholar 

  23. E Kasper and H Dämbkes: Inst. Phys. Conf. Ser. No. 82, 93 (1987)

    Google Scholar 

  24. H Jorke: to be published

    Google Scholar 

  25. J-F Luy: IEEE Trans. ED-34, 1084 (1987)

    Google Scholar 

  26. J Büchler, E Kasper, J-F Luy, P Russer and K Strohm: submitted IEEE Trans. MTT — Dec. 88

    Google Scholar 

  27. VP Kesan, DP Neikirk, BG Streetman and PA Blakey: IEEE EDL-8, 129 (1987)

    Google Scholar 

  28. M Kelly: 4th Workshop MTT-Chapter, IEEE (West German Section), Sept. 29th, 1987

    Google Scholar 

  29. H Krömer: Proc. IEEE 70, 12 (1982)

    Google Scholar 

  30. C Smith and AD Welbourne: Proc. IEEE Bipolar Circ. and Techn. Meeting, Minneapolis (1987)

    Google Scholar 

  31. E Kasper, H-J Herzog and K Wörner: J. Crystal Growth 81, 458 (1987)

    Article  ADS  Google Scholar 

  32. P Narozny, M Hamacher, H Dämbkes, H Kibbel and E Kasper: will be published

    Google Scholar 

  33. E Kasper: Silicon Germanium-Heterostructures on Silicon Substrates: in Advances in Solid State Physics, Vol. 27, p. 265, ed. by P Grosse, Vieweg, Braunschweig, 1987

    Google Scholar 

  34. U Gnutzmann and K Clausecker: Appl. Phys. 3, 9 (1974)

    Article  ADS  Google Scholar 

  35. S Froyen, DM Wood and A Zunger: Phys. Rev. B36, 4547 (1987)

    ADS  Google Scholar 

  36. I. Morrison and M Jaros: to be published

    Google Scholar 

  37. TP Pearsall, J Berk, LC Feldman, JM Bonar, JP Mannaerts and Durmazd: Phys. Rev. Lett. 58, 729 (1987)

    Article  ADS  Google Scholar 

  38. R Zachai, E Frieß, G Abstreiter, E Kasper and H Kibbel: to be published

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. AEG Research Center Ulm, Sedanstr. 10, D-7900, Ulm, Germany

    E. Kasper

Authors
  1. E. Kasper
    View author publications

    You can also search for this author in PubMed Google Scholar

Editor information

Editors and Affiliations

  1. Physics of Materials and Microstructures Division, Bagneux Laboratory, C.N.E.T., Bagneux, France

    Yves I. Nissim

  2. Physics Division, Central Research Laboratory, Thomson CSF, Orsay, France

    Emmanuel Rosencher

Rights and permissions

Reprints and permissions

Copyright information

© 1989 Kluwer Academic Publishers

About this chapter

Cite this chapter

Kasper, E. (1989). SiGe/Si Superlattices: Strain Influence and Devices. In: Nissim, Y.I., Rosencher, E. (eds) Heterostructures on Silicon: One Step Further with Silicon. NATO ASI Series, vol 160. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-0913-7_13

Download citation

  • DOI: https://doi.org/10.1007/978-94-009-0913-7_13

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-6900-7

  • Online ISBN: 978-94-009-0913-7

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics

Search

Navigation