Abstract
The photoluminescence properties of silicon nanostructured materials are strongly influenced by thermal treatments. To develop silicon based room temperature light emitting materials in addition to porous silicon fabricated by anodization, other kinds of films fabricated by sputtering, gas vaporization, and chemical vapor deposition were investigated [1]. Thermal treatments have different influences upon these structures: porous silicon is stabilized and its photoluminescence (PL) intensity is increased, while in substoichiometric SiOx films, annealing causes Si nanocrystal formation which leads to PL emission. The influence of thermal treatments on photoluminescence emission of silicon nanocrystal embedded in oxide films is studied in this paper. The samples were investigated by IR and Raman measurements to determine the structure and chemical bonds. Their optical properties were studied by PL measurements.
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© 2003 Springer Science+Business Media Dordrecht
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Miu, M., Angelescu, A., Kleps, I., Simion, M., Bragaru, A. (2003). Structural And Optical Properties Of Silicon Nanocrystals Embedded In Silicon Oxide Films. In: Pavesi, L., Gaponenko, S., Dal Negro, L. (eds) Towards the First Silicon Laser. NATO Science Series, vol 93. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0149-6_14
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DOI: https://doi.org/10.1007/978-94-010-0149-6_14
Publisher Name: Springer, Dordrecht
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