Abstract
The impact of high energy particles in digital memory elements becomes important as technology scales down. The memory elements hold high density latches to store data and these latches are susceptible to disturbs due to particle strikes. The alpha particles, neutrons from cosmic rays may cause Single Event Upset (SEU) in memory cells. In this paper, we propose a method to estimate and compare SER robustness of different layout topologies of SRAM cell. We demonstrate that the radiation hardened layout topologies offer much better Soft Error Rate (SER) robustness compared to conventional layout of the 6-T SRAM cell in 28FDSOI and 40 nm technology. The analysis is done using ELDO simulator for a wide range of Linear Energy Transfer (LET) profiles of particle strikes.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
Heijmen, T., et al.: 2004 IEEE IRPS. Proceedings, pp. 675–676 (2004)
Chatterjee, I., et al.: IEEE Trans. Nuclear Sci. 61(6), December 2014
Bosser, A., et al.: Rad and Its Effects on Components and Systems (RADECS) (2015)
Dong, W., et al.: IEEE/ACM ICCAD Proceedings, pp. 378–385 (2008)
Messenger, G.C.: IEEE Trans. Nuclear Sci. NS-29(6), December 1982
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2017 Springer Nature Singapore Pte Ltd.
About this paper
Cite this paper
Ilakal, A., Grover, A. (2017). Comparison of SRAM Cell Layout Topologies to Estimate Improvement in SER Robustness in 28FDSOI and 40 nm Technologies. In: Kaushik, B., Dasgupta, S., Singh, V. (eds) VLSI Design and Test. VDAT 2017. Communications in Computer and Information Science, vol 711. Springer, Singapore. https://doi.org/10.1007/978-981-10-7470-7_41
Download citation
DOI: https://doi.org/10.1007/978-981-10-7470-7_41
Published:
Publisher Name: Springer, Singapore
Print ISBN: 978-981-10-7469-1
Online ISBN: 978-981-10-7470-7
eBook Packages: Computer ScienceComputer Science (R0)