Abstract
The thermal stability of Er2O3 and Al2O3 doped Er2O3 thin films deposited on Si substrates has been investigated by x-ray diffraction and x-ray photoelectron spectroscopy. The structures for the as-grown Er2O3 and Al2O3 doped Er2O3 films on Si substrates are found to convert from amorphous to polycrystalline at the annealing temperatures above 450 °C in O2 ambience. The crystallinity and the surfaces roughness of Er2O3 thin films on p-type Si (001) substrates are decreased if Al2O3 is doped in them. However, the result is complicated if these Er2O3 and Al2O3 doped Er2O3 thin films deposited on n-type Si(001) substrates.
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Acknowledgements
This work was supported by National Natural Science Foundation of China (Grant No. 51672172), and by the Natural Science Foundation of Shanghai (Grant No. 15ZR1418700).
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Pan, X., Zhang, Z., Zhu, Y., Fang, Z., Cao, H. (2018). Thermal Stability of Er2O3–Al2O3 Thin Films Grown on Si Substrates. In: Han, Y. (eds) Advanced Functional Materials. CMC 2017. Springer, Singapore. https://doi.org/10.1007/978-981-13-0110-0_41
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DOI: https://doi.org/10.1007/978-981-13-0110-0_41
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