Abstract
This paper proposes a compact model of STT-MTJ being operated in the sub-volume (MTJ lateral diameter less than 40 nm) region. The model is found to have lower switching currents as well as higher thermal stability factor as compared to the conventional MTJ models being used. This paper mainly deals with the description of the static behavior of the model. This includes the critical current calculations, thermal stability calculations, TMR and MTJ resistance dependence on bias voltage. This paper also proposes a new READ and WRITE circuitry to facilitate an easier read and write operation. The paper illustrates a transmission gate based 2T1M MRAM bit cell which uses MTJ as a memory element.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
Wolf, S.A., et al.: The promise of nanomagnetics and spintronics for future logic and universal memory. Proc. IEEE 98(12), 2155–2168 (2010)
Azevedo, J., et al.: Dynamic compact model of self-referenced magnetic tunnel junction. IEEE Trans. Electron Dev. 61(11), 3877–3882 (2014)
Sugahara, S., Nitta, J.: Spin-transistor electronics: an overview and outlook. Proc. IEEE 98(12), 2124–2154 (2010)
Ikeda, S., et al.: Magnetic tunnel junctions for spintronic memories and beyond. IEEE Trans. Electron Dev. 54(5), 991–999 (2007)
Liu, X., et al.: Ferromagnetic resonance and damping properties of CoFeB thin films as free layers in MgO-based magnetic tunnel junctions. J. Appl. Phys. 110, 033910 (2011)
Dorrance, R., Ren, F., Toriyama, Y., Hafez, A.A., Yang, C.K.K., Markovic, D.: Scalability and design-space analysis of a 1T-1MTJ memory cell for STT-RAMs. IEEE Trans. Electron Dev. 59(4), 878–887 (2012)
Zhang, Y., et al.: Compact model of subvolume MTJ and its design application at nanoscale technology nodes. IEEE Trans. Electron Dev. 62(6), 2048–2055 (2015)
Yee, C.J., Hatem, F.O., Kumar, T.N., Almurib, H.A.F.: Compact SPICE modeling of STT-MTJ device. In: 2015 IEEE Student Conference on Research and Development (SCOReD), Kuala Lumpur, pp. 625–628 (2015)
Lu, Y., et al.: Bias voltage and temperature dependence of magnetotunneling effect. J. Appl. Phys. 83(11), 6515–6517 (1998)
Xu, Z., Sutaria, K.B., Yang, C., Chakrabarti, C., Cao, Y.: Compact modeling of STT-MTJ for SPICE simulation. In: 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC), Bucharest, pp. 338–341 (2013)
Chatterjee, S., et al.: Impact of self-heating on reliability of a spin-torque-transfer RAM cell. IEEE Trans. Electron Dev. 59(3), 791–799 (2012)
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2018 Springer Nature Singapore Pte Ltd.
About this paper
Cite this paper
Saha, S., Dubey, S.K., Banerjee, S., Pal, I., Islam, A. (2018). Nonvolatile Write Driver for Spin Transfer Torque Memory and Logic Design. In: Mandal, J., Sinha, D. (eds) Social Transformation – Digital Way. CSI 2018. Communications in Computer and Information Science, vol 836. Springer, Singapore. https://doi.org/10.1007/978-981-13-1343-1_17
Download citation
DOI: https://doi.org/10.1007/978-981-13-1343-1_17
Published:
Publisher Name: Springer, Singapore
Print ISBN: 978-981-13-1342-4
Online ISBN: 978-981-13-1343-1
eBook Packages: Computer ScienceComputer Science (R0)