Abstract
Near-infrared (NIR) photosensitivity organic field-effect transistors (PhOFETs) have drawn substantial attention due to their applications in the field of industry and science. It is difficult to fabricate the device with high photosensitivity and high photoresponsivity, which greatly limits their development. In this paper, a high photosensitivity (NIR) PhOFETs based on lead phthalocyanine (PbPc):C60 bulk heterojunction were proposed. For NIR light with a wavelength of 808 nm, the device exhibited a relative high photosensitivity through the applied gate voltage and the maximum photosensitivity as high as 2300, which was attributed to the inherent high exciton dissociation efficiency and the relatively low carrier mobility of the BHJ active layer.
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Acknowledgements
This work was supported by National Key R&D Program of ChinaGrant No. 2016YFF0203605, the Natural Science Foundation of Zhejiang Province Grant No. LY18F050009 and LY18F040007.
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Dai, Q. et al. (2020). High Photosensitivity Near-Infrared PhOFETs Based on PbPc:C60 Bulk Heterojunction. In: Peng, Y., Dong, X. (eds) Proceedings of 2018 International Conference on Optoelectronics and Measurement. Lecture Notes in Electrical Engineering, vol 567. Springer, Singapore. https://doi.org/10.1007/978-981-13-8595-7_22
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