Abstract
This paper reports on the effects of different dielectrics on recessed-gate gallium oxide MOSFETs in terms of analog and RF performance. Different gate dielectrics like \({\text {SiO}}_{2}, {\text {Al}}_{2}{\text {O}}_{3}\) and \({\text {HfO}}_{2} \) are considered as gate dielectric material, and their effects are analysed. High-k dielectric \({\text {HfO}}_{2} \) provides better electrical performance compared to other dielectric materials. High-k dielectric offers good threshold voltage and better DIBL, output conductance, low leakage current with increased drain current response which can be traded-off with a bit increased intrinsic capacitance, GBW and low cut-off frequency. High-k dielectric-based gallium oxide MOSFETs show its potential applications in high-voltage, high-power switching applications with a good \( I_{\text {on}}/I_{\text {off}} \) ratio of \(6.75\times 10^{9}\).
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Acknowledgements
This work was supported by the CSIR-SRF Direct Scheme at Central Electronics Engineering Research Institute [Grant Number-31/0007(11993)/2021-EMR-I, HCP-0012]. The authors would like to acknowledge Director, CSIR-CEERI, for providing the resources.
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Kachhawa, P., Chaturvedi, N. (2023). High-k Dielectric Influence on Recessed-Gate Gallium Oxide MOSFETs. In: Lenka, T.R., Misra, D., Fu, L. (eds) Micro and Nanoelectronics Devices, Circuits and Systems. Lecture Notes in Electrical Engineering, vol 904. Springer, Singapore. https://doi.org/10.1007/978-981-19-2308-1_3
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