1. In _x Ga _1–x As Strained-Layer Quantum Well in a Pseudomorphic Heterostructure: High-Resolution XRD Characterization for Different Quantum-Well Thicknesses

   • A. M. Afanas'ev
   • R. M. Imamov
   • Yu. V. Khabarov

   OriginalPaper Pages: 63 - 68

2. High-Permittivity-Insulator EEPROM Cell Using Al₂O₃ or ZrO₂

   • V. A. Gritsenko
   • K. A. Nasyrov
   • A. L. Aseev

   OriginalPaper Pages: 69 - 74

3. Planar Power MOSFETs for Smart Power CMOS Switches

   • M. A. Korolev
   • R. D. Tikhonov

   OriginalPaper Pages: 75 - 78

4. Current–Voltage Characteristics of Two-Electrode Elements with Carbon Nanotubes

   • I. I. Bobrinetskii
   • V. K. Nevolin
   • Yu. A. Chaplygin

   OriginalPaper Pages: 79 - 81

5. Impulse-Current Generation by the Bispin: Factors Determining the Peak Current

   • A. P. Lysenko

   OriginalPaper Pages: 82 - 87

6. Electrochemical Etching of a Niobium Film through a Thin Nanomask Formed by AFM Tip-Induced Local Oxidation

   • A. N. Red'kin
   • L. V. Malyarevich
   • G. M. Mikhailov

   OriginalPaper Pages: 88 - 90

7. Surface-Photovoltage Measurement of Volume Electron Lifetime in p-Si Wafers

   • V. A. Skidanov
   • M. S. Baev
   • N. A. Baikova

   OriginalPaper Pages: 91 - 95

8. Temperature Dependence of Carrier Generation at the Silicon–Lead-Borosilicate-Glass Interface

   • S. I. Vlasov
   • P. B. Parchinskii
   • L. G. Ligai

   OriginalPaper Pages: 95 - 96

9. NANODEV: A Nanoelectronic-Device Simulation Software System

   • I. I. Abramov
   • I. A. Goncharenko
   • A. I. Rogachev

   OriginalPaper Pages: 97 - 104

10. Prediction of Local and Global Ionization Effects on ICs: The Synergy between Numerical and Physical Simulation

    • V. V. Belyakov
    • A. I. Chumakov
    • A. V. Sogoyan

    OriginalPaper Pages: 105 - 118

11. Multilevel-Injection Characterization of Positive-Charge Generation and Relaxation in MOS Oxide

    • V. V. Andreev
    • V. G. Baryshev
    • A. A. Stolyarov

    OriginalPaper Pages: 119 - 124