Kinetics of production of oxygen-containing quenched-in donors in silicon and their nonuniform distribution: An analytical solution P. A. Selishchev Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 10 - 13
Mössbauer-effect study of off-center atoms in IV-VI semiconductors J. BlandM. F. ThomasT. M. Tkachenko Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 14 - 19
A long-range influence of the argon-ion irradiation on the silicon nitride layers formed by the ion implantation E. S. DemidovV. V. KarzanovV. V. Sdobnyakov Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 20 - 23
A study of luminescence centers related to copper and oxygen in ZnSe N. K. MorozovaI. A. KaretnikovE. M. Gavrishchuk Electronic and Optical Properties of Semiconductors Pages: 24 - 32
The concentration dependence of acceptor-state radii in p-Hg0.78Cd0.22Te crystals V. V. Bogoboyashchii Electronic and Optical Properties of Semiconductors Pages: 33 - 39
Infrared tomography of the charge-carrier lifetime and diffusion length in semiconductor-grade silicon ingots V. D. AkhmetovN. V. Fateev Electronic and Optical Properties of Semiconductors Pages: 40 - 47
Observation of minority-carrier traps in Schottky diodes with a high barrier and a compensated near-contact region using deep-level transient spectroscopy E. N. AgafonovU. A. AminovL. S. Lepnev Electronic and Optical Properties of Semiconductors Pages: 48 - 53
Effect of the charge-carrier drift in a built-in quasi-electric field on the emission spectrum of the graded-gap semiconductors A. I. BazykV. F. KovalenkoS. V. Shutov Electronic and Optical Properties of Semiconductors Pages: 54 - 58
The electronic spectrum and electrical properties of germanium with a doubly charged gold impurity on both sides of the L 1 ⇄ Δ1 intervalley transition for uniform pressures of up to 7 GPa M. I. DaunovI. K. KamilovS. F. Gabibov Electronic and Optical Properties of Semiconductors Pages: 59 - 66
Distribution of electrons between valleys and band-gap narrowing at picosecond superluminescence in GaAs N. N. AgeevaI. L. BronevoiA. N. Krivonosov Electronic and Optical Properties of Semiconductors Pages: 67 - 71
On the physical nature of a photomechanical effect A. B. GerasimovG. D. ChiradzeN. G. Kutivadze Electronic and Optical Properties of Semiconductors Pages: 72 - 76
Excess tunneling currents in p-Si-n-3C-SiC heterostructures S. Zh. KarazhanovI. G. AtabaevE. Dzhaksimov Semiconductor Structures, Interfaces, and Surfaces Pages: 77 - 79
Effect of sulfur and selenium on the surface relief of insulating films and electrical characteristics of metal-insulator-p-GaAs structures A. V. PaninA. R. ShugurovV. M. Kalygina Semiconductor Structures, Interfaces, and Surfaces Pages: 80 - 85
Deep levels related to gallium atom clusters in GaAs S. N. GrinyaevV. A. Chaldyshev Low-Dimensional Systems Pages: 86 - 90
Vibrational spectra of strained (001) ZnSe/ZnS, ZnSe/ZnTe, and ZnS/ZnTe superlattices in terms of the Keating model E. N. PrykinaYu. I. PolygalovA. V. Kopytov Low-Dimensional Systems Pages: 91 - 92
Influence of bismuth doping of InAs quantum-dot layer on the morphology and photoelectronic properties of Gas/InAs heterostructures grown by metal-organic chemical vapor deposition B. N. ZvonkovI. A. KarpovichS. V. Morozov Low-Dimensional Systems Pages: 93 - 98
Persistent photoeffects in p-i-n GaAs/AlGaAs heterostructures with double quantum wells S. I. DorozhkinV. B. TimofeevJ. Hvam Low-Dimensional Systems Pages: 99 - 105
Resonance tunneling of X-electrons in AlAs/GaAs(111) structures: Pseudopotential calculations and models G. F. KaravaevV. N. Chernyshov Low-Dimensional Systems Pages: 106 - 111
Charge-carrier transport in nanometer-sized periodic Si/CaF2 structures with participation of traps Yu. A. BerashevichA. L. DanilyukV. E. Borisenko Low-Dimensional Systems Pages: 112 - 116
An avalanche photodiode with metal-insulator-semiconductor properties Z. Ya. SadygovT. M. BurbaevV. A. Kurbatov Physics of Semiconductor Devices Pages: 117 - 121
