1. Artificial GeSi substrates for heteroepitaxy: Achievements and problems

   • Yu. B. Bolkhovityanov
   • O. P. Pchelyakov
   • S. I. Chikichev

   Review Pages: 493 - 518

2. Propagation of nonequilibrium phonons in single-crystal ZnTe

   • T. I. Galkina
   • A. Yu. Klokov
   • V. V. Zaitsev

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 519 - 522

3. Magnetooptical oscillations in bismuth at T≥77 K

   • O. V. Kondakov
   • K. G. Ivanov

   Electronic and Optical Properties of Semiconductors Pages: 523 - 525

4. A local specific feature of variation in the spectrum of picosecond superluminescence upon adding excited carriers to a non-Fermi electron-hole plasma in GaAs

   • N. N. Ageeva
   • I. L. Bronevoi
   • S. V. Stegantsov

   Electronic and Optical Properties of Semiconductors Pages: 526 - 531

5. Phonon-assisted exciton luminescence in GaN layers grown by MBE and chloride-hydride VPE

   • M. G. Tkachman
   • T. V. Shubina
   • B. Monemar

   Electronic and Optical Properties of Semiconductors Pages: 532 - 536

6. Electronic properties of irradiated semiconductors. A model of the fermi level pinning

   • V. N. Brudnyi
   • S. N. Grinyaev
   • N. G. Kolin

   Electronic and Optical Properties of Semiconductors Pages: 537 - 545

7. Relaxation of a defect subsystem in silicon irradiated with high-energy heavy ions

   • S. A. Smagulova
   • I. V. Antonova
   • V. A. Skuratov

   Electronic and Optical Properties of Semiconductors Pages: 546 - 550

8. Diffusion of europium in silicon

   • D. É. Nazyrov

   Electronic and Optical Properties of Semiconductors Pages: 551 - 552

9. Photosensitive structures based on CdGa₂Se₄ single crystals

   • A. A. Vaipolin
   • Yu. A. Nikolaev
   • N. Fernelius

   Semiconductor Structures, Interfaces, and Surfaces Pages: 553 - 558

10. Structural and optical properties of InAs quantum dots in AlGaAs matrix

    • D. S. Sizov
    • Yu. B. Samsonenko
    • N. N. Ledentsov

    Low-Dimensional Systems Pages: 559 - 563

11. Model of multi-island single-electron arrays based on the Monte Carlo method

    • I. I. Abramov
    • S. A. Ignatenko
    • E. G. Novik

    Low-Dimensional Systems Pages: 564 - 568

12. Dispersion of the relaxation time of quasi-two-dimensional electrons under conditions of ionized-impurity scattering in a superlattice with doped quantum wells

    • S. I. Borisenko

    Low-Dimensional Systems Pages: 569 - 572

13. Electronic and optical properties of AlAs/Al_xGa_1−x As(110) superlattices

    • G. F. Karavaev
    • V. N. Chernyshov
    • R. M. Egunov

    Low-Dimensional Systems Pages: 573 - 580

14. Photoluminescence study of AlGaAs/GaAs/AlGaAs double quantum wells separated by a thin AlAs layer

    • G. B. Galiev
    • M. V. Karachevtseva
    • N. G. Yaremenko

    Low-Dimensional Systems Pages: 581 - 585

15. Electron heating by a strong longitudinal electric field in quantum wells

    • L. E. Vorob’ev
    • S. N. Danilov
    • D. A. Firsov

    Low-Dimensional Systems Pages: 586 - 593

16. Semi-insulating silicon carbide layers obtained by diffusion of vanadium into porous 4H-SiC

    • M. G. Mynbaeva
    • A. A. Lavrent’ev
    • A. A. Lebedev

    Amorphous, Vitreous, and Porous Semiconductors Pages: 594 - 597

17. Quantum-chemical simulation of the influence of defects on the infrared spectrum and the electronic structure of a-Se

    • A. S. Zyubin
    • F. V. Grigor’ev
    • S. A. Dembovskii

    Amorphous, Vitreous, and Porous Semiconductors Pages: 598 - 603

18. Phase transformations initiated in thin layers of amorphous silicon by nanosecond excimer laser pulses

    • G. D. Ivlev
    • E. I. Gatskevich

    Amorphous, Vitreous, and Porous Semiconductors Pages: 604 - 610

19. Detection of hydrogen impurity in silicon radiation detectors

    • L. F. Makarenko
    • F. P. Korshunov
    • N. I. Zamyatin

    Physics of Semiconductor Devices Pages: 611 - 615