1. The direct determination of the vacancy concentration andP-T phase diagram of Hg_0.8Cd_0.2Te and Hg_0.6Cd_0.4Te by dynamic mass-loss measurements

   • Heribert Wiedemeier
   • Yi Gao Sha

   OriginalPaper Pages: 761 - 771

2. Activation efficiencies for a standard qualification implant in gaas annealed by a rapid thermal process

   • J. O. Crist
   • D. C. Look

   OriginalPaper Pages: 773 - 776

3. Growth of CdGeAs₂ single crystals by the chemical vapor transport method

   • F. P. Baumgartner
   • M. Lux-Steiner
   • E. Bucher

   OriginalPaper Pages: 777 - 781

4. Growth of InAs by MOVPE using TBAs and TMIn

   • S. K. Haywood
   • R. W. Martin
   • P. J. Walker

   OriginalPaper Pages: 783 - 788

5. Si-implantation into GaAs grown on Si

   • Mulpuri V. Rao
   • R. Sachidananda Babu
   • Nick Bottka

   OriginalPaper Pages: 789 - 794

6. Properties of a poly-Si/GaAs layered structure on Si for Si heterojunction bipolar transistor

   • K. Kikuta
   • T. Kikkawa
   • J. Sone

   OriginalPaper Pages: 795 - 799

7. Surface wave excitation auger electron spectroscopy of lnGaAs/GaAs(001) grown by alternate molecular-beam epitaxy

   • Hiroshi Nakayama
   • Tuyoshi Takenaka
   • Kazuyuki Ueda

   OriginalPaper Pages: 801 - 808

8. Thickness estimation of silicon-on-lnsulator by means of the fourier transform of bilinearly transformed infrared reflectance data

   • Pieter L. Swart
   • Beatrys M. Lacquet

   OriginalPaper Pages: 809 - 814

9. Long-storage-time MIS capacitors formed on InSb films grown by MOCVD

   • James T. Hall
   • Melvin M. Moriwaki
   • Robert M. Biefeld

   OriginalPaper Pages: 815 - 820

10. Structural characterization of Ti and Pt thin films on GaAs(100) substrate

    • X. Wu
    • E. S. Yang
    • N. D. Theodore

    OriginalPaper Pages: 821 - 823

11. The effect of selenium doping on the optical and structural properties of Ga_0.5ln_0.5P

    • Sarah R. Kurtz
    • J. M. Olson
    • E. Beck

    OriginalPaper Pages: 825 - 828

12. Deep levels in superlattices

    • John D. Dow
    • Shang Yuan Ren
    • Ruo-Ping Wang

    OriginalPaper Pages: 829 - 835

13. Electronic defect characterization in silicon

    • H. G. Grimmeiss
    • M. Kleverman
    • P. Omling

    OriginalPaper Pages: 837 - 849

14. Metalorganic vapor phase epitaxial growth, characterization and annealing experiments on InP doping superlattices

    • A. Molassioti
    • F. Scholz
    • Y. Gao

    OriginalPaper Pages: 851 - 856

15. Foreword

    EditorialNotes Pages: 857 - 857