1. Foreword

   EditorialNotes Pages: 1133 - 1133

2. Application of eddy current technique to vertical bridgman growth of CdZnTe

   • R. Shetty
   • C. K. Ard
   • J. P. Wallace

   OriginalPaper Pages: 1134 - 1138

3. Recent results on metalorganic vapor phase epitaxially grown HgCdTe heterostructure devices

   • C. T. Elliott
   • N. T. Gordon
   • N. E. Metcalfe

   OriginalPaper Pages: 1139 - 1145

4. Minimally cooled heterojunction laser heterodyne detectors in metalorganic vapor phase epitaxially grown Hg_1-xCd_xTe

   • C. T. Elliott
   • N. T. Gordon
   • N. E. Metcalfe

   OriginalPaper Pages: 1146 - 1150

5. Negative diffusion capacitance in auger-Suppressed HgCdTe heterostructure diodes

   • T. J. Phillips
   • N. T. Gordon

   OriginalPaper Pages: 1151 - 1156

6. Advanced magneto-transport characterization of LPE-grown Hg_1-xCd_x Te by quantitative mobility spectrum analysis

   • J. R. Meyer
   • C. A. Hoffman
   • P. K. Liao

   OriginalPaper Pages: 1157 - 1164

7. SIMS characterization of HgCdTe and related II-VI compounds

   • Jack Sheng
   • Larry Wang
   • Gayle E. Lux

   OriginalPaper Pages: 1165 - 1171

8. Ion drift in Cd-rich HgCdTe crystals

   • J. F. Barbot
   • B. O. Wartlick
   • C. Blanchard

   OriginalPaper Pages: 1172 - 1175

9. Recent progress on HgCdTe at the national laboratory for infrared physics in china

   • Junhao Chu
   • Dingyuan Tang

   OriginalPaper Pages: 1176 - 1182

10. Trace copper measurements and electrical effects in LPE HgCdTe

    • J. P. Tower
    • S. P. Tobin
    • H. F. Arlinghaus

    OriginalPaper Pages: 1183 - 1187

11. Reduction of CdZnTe substrate defects and relation to epitaxial HgCdTe quality

    • S. Sen
    • C. S. Liang
    • H. F. Arlinghaus

    OriginalPaper Pages: 1188 - 1195

12. Magnetophonon oscillations in the transverse and longitudinal magnetoresistance of Hg_1−xCd_xTe

    • J. Baaks
    • C. L. Littler
    • M. Bruder

    OriginalPaper Pages: 1196 - 1202

13. Magnetoluminescence properties of Hg_1−xCd_xTe epitaxial layers and superlattice structures grown by metalorganic molecular beam epitaxy

    • T. K. Tran
    • A. Parikh
    • U. Muller

    OriginalPaper Pages: 1203 - 1208

14. Growth and characterization of inTISb for IR-detectors

    • N. H. Karam
    • R. Sudharsanan
    • M. A. Dodd

    OriginalPaper Pages: 1209 - 1214

15. Electrical characterization of very-narrow-gap bulk HgCdTe single crystals by variable magnetic field hall measurements

    • J. S. Kim
    • D. G. Seiler
    • M. B. Reine

    OriginalPaper Pages: 1215 - 1220

16. Study of the charge collection efficiency of CdZnTe radiation detectors

    • Y. Nemirovsky
    • A. Ruzin
    • J. Gorelik

    OriginalPaper Pages: 1221 - 1231

17. Application of II-VI materials to nuclear medicine

    • H. Bradford Barber

    OriginalPaper Pages: 1232 - 1240

18. Drift mobility and photoluminescence measurements on high resistivity Cd_1−xZn_xTe crystals grown from Te-Rich solution

    • K. Suzuki
    • S. Seto
    • K. Imai

    OriginalPaper Pages: 1241 - 1246

19. Photon assisted growth of nitrogen-doped CdTe and the effects of hydrogen incorporation during growth

    • Zhonghai Yu
    • S. L. Buczkowski
    • M. Richards-Babb

    OriginalPaper Pages: 1247 - 1253

20. Comparison of HgTe materials grown in (100), (110), (111), and (211) Orientations

    • Srinivasan Krishnamurthy
    • A. -B. Chen
    • A. Sher

    OriginalPaper Pages: 1254 - 1259

21. Comparison of the diffusion of Hg into CdTe and Hg_0.8Cd_0.2Te

    • M. U. Ahmed
    • E. D. Jones
    • N. M. Stewart

    OriginalPaper Pages: 1260 - 1265

22. Enhancement of the steady state minority carrier lifetime in HgCdTe photodiode using ECR plasma hydrogenation

    • Han Jung
    • Hee Chul Lee
    • Choong-Ki Kim

    OriginalPaper Pages: 1266 - 1269

23. Dry etching of Hg_1−xCd_xTe using CH₄/H₂/Ar/N₂ electron cyclotron resonance plasmas

    • Robert C. Keller
    • M. Seelmann-Eggebert
    • H. J. Richter

    OriginalPaper Pages: 1270 - 1275

24. Growth of fully doped Hg_1−xCd_xTe heterostructures using a novel iodine doping source to achieve improved device performance at elevated temperatures

    • C. D. Maxey
    • C. L. Jones
    • C. T. Elliott

    OriginalPaper Pages: 1276 - 1285

25. HgCdTe/CdZnTe P-I-N high-energy photon detectors

    • W. J. Hamilton
    • D. R. Rhiger
    • R. E. Mills

    OriginalPaper Pages: 1286 - 1292

26. Interface formation between deposited Sn and Hg_0.8Cd_0.2Te

    • H. Zimmermann
    • Robert C. Keller
    • M. Seelmann-Eggebert

    OriginalPaper Pages: 1293 - 1299

27. P-Type doping with arsenic in (211)B HgCdTe grown by MBE

    • P. S. Wijewarnasuriya
    • S. S. Yoo
    • S. Sivananthan

    OriginalPaper Pages: 1300 - 1305

28. Synchrotron X-Ray photoconductor detector arrays made on MBE grown CdTe

    • S. S. You
    • B. Rodricks
    • P. A. Montano

    OriginalPaper Pages: 1306 - 1311

29. Characteristics and uniformity of group V implanted and annealed HgCdTe heterostructure

    • L. O. Bubulac
    • J. Bajaj
    • W. V. Mc Levige

    OriginalPaper Pages: 1312 - 1317

30. CdZnTe photodiode arrays for medical imaging

    • R. Sudharsanan
    • T. Parodos
    • N. H. Karam

    OriginalPaper Pages: 1318 - 1322

31. Material inhomogeneities in Cd_1-xZn_xTe and their effects on large volume gamma-ray detectors

    • J. M. Van Scyoc
    • J. C. Lund
    • T. E. Schlesinger

    OriginalPaper Pages: 1323 - 1327

32. Improved arsenic doping in metalorganic chemical vapor deposition of HgCdTe andin situ growth of high performance long wavelength infrared photodiodes

    • P. Mitra
    • Y. L. Tyan
    • M. B. Reine

    OriginalPaper Pages: 1328 - 1335

33. Modeling ion implantation of HgCdTe

    • H. G. Robinson
    • D. H. Mao
    • C. R. Helms

    OriginalPaper Pages: 1336 - 1340

34. Heteroepitaxy of HgCdTe(112) infrared detector structures on Si(112) substrates by molecular-beam epitaxy

    • T. J. De Lyon
    • R. D. Rajavel
    • G. M. Venzor

    OriginalPaper Pages: 1341 - 1346

35. Orientation dependence of HgCdTe epitaxial layers grown by MOCVD on Si substrates

    • K. Shigenaka
    • K. Matsushita
    • H. Wada

    OriginalPaper Pages: 1347 - 1352

36. Growth of (111) HgCdTe on (100) Si by MOVPE using metalorganic tellurium adsorption and annealing

    • K. Maruyama
    • H. Nishino
    • H. Wada

    OriginalPaper Pages: 1353 - 1357

37. Direct growth of CdTe on (100), (211), and (111) Si by metalorganic chemical vapor deposition

    • H. Ebe
    • T. Okamoto
    • H. Wada

    OriginalPaper Pages: 1358 - 1361

38. Metalorganic vapor phase epitaxy of (100) CdZnTe layers using diisopropylzinc source

    • K. Yasuda
    • K. Kawamoto
    • H. Maeba

    OriginalPaper Pages: 1362 - 1365

39. Pb_1−xSn_xSe-on-Si LWIR sensor arrays and thermal imaging with JFET/CMOS read-out

    • H. Zogg
    • A. Fach
    • W. Buttler

    OriginalPaper Pages: 1366 - 1370

40. In situ sensors for monitoring and control in molecular beam epitaxial growth of Hg_1−xCd_xTe

    • M. J. Bevan
    • W. M. Duncan
    • H. D. Shih

    OriginalPaper Pages: 1371 - 1374

41. Key performance-limiting defects in P-on-N HgCdTe LPE heterojunction infrared photodiodes

    • M. C. Chen
    • R. S. List
    • H. F. Schaake

    OriginalPaper Pages: 1375 - 1382

42. Annealing studies of undoped Hg_1−xMn_x Te bulk crystals at high temperatures

    • Susan W. Kutcher
    • T. O. Poehler
    • P. Becla

    OriginalPaper Pages: 1383 - 1387

43. Mercury cadmium telluride-based resonant cavity light emitting diode

    • J. L. Pautrat
    • E. Hadji
    • N. Magnea

    OriginalPaper Pages: 1388 - 1393

44. Uniform low defect density molecular beam epitaxial HgCdTe

    • J. Bajaj
    • J. M. Arias
    • L. J. Kozlowski

    OriginalPaper Pages: 1394 - 1401

45. Growth of high quality CdTe on Si substrates by molecular beam epitaxy

    • L. A. Almeida
    • Y. P. Chen
    • S. -C. Y. Tsen

    OriginalPaper Pages: 1402 - 1405

46. In-situ spectroscopic ellipsometry of HgCdTe

    • J. D. Benson
    • A. B. Cornfeld
    • John A. Woollam

    OriginalPaper Pages: 1406 - 1410

47. Status of MBE technology for the flexible manufacturing of HgCdTe focal plane arrays

    • R. D. Rajavel
    • D. Jamba
    • S. M. Johnson

    OriginalPaper Pages: 1411 - 1415