Abstract
Elementary silicon activated with copper was heated up in tetraethylene pentamine to 300°C. After drying in vacuum, an amorphous solid was obtained. Calcining this solid under argon at temperatures of up to 1200°C led to amorphous products, while at higher temperatures silicon carbide was obtained. Calcining in ammonia at temperatures of up to 1000°C also led to amorphous products. At calcination temperatures of 1200 and 1400°C crystalline silicon nitride and silicon nitride fibres respectively were obtained. The dependence of the fibre growth on the ammonia flow rate, as well as the occurrence of spherical iron-enriched particles terminating these fibres gave evidence for a vapour-liquid-solid mechanism being responsible for the fibre growth.
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Deckwerth, M., Rüssel, C. A new polymeric route to silicon carbide and silicon nitride using elementary silicon as starting material. Journal of Materials Science 29, 4500–4504 (1994). https://doi.org/10.1007/BF00376272
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DOI: https://doi.org/10.1007/BF00376272