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Growth and characterization of Al2O3 insulator gate on p-InP and p-Si by metallorganic chemical vapour deposition at low temperatures

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Abstract

Metallorganic chemical vapour deposition of Al2O3 from Al(O-C3H7)3 via pyrolysis at low (∼280 °C) temperature was investigated with the goal of producing high quality Al2O3/p-InP (1 0 0) and Al2O3/p-Si (1 0 0) interfaces. Ellipsometer measurements of Al2O3 have determined the refractive index of the film to be about 1.55. Room temperature capacitance-voltage measurements were used to characterize the electrical properties of the structures after metal gate electrodes have been deposited. Low temperature conductance-voltage measurements were also carried out to investigate the quality of the Al2O3/InP interfaces. The interface state densities Al2O3/p-InP and Al2O3/p-Si determined from deep-level transient spectroscopy were approximately 1012 eV−1 cm−2 and 1011 eV−1 cm−2.

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Authors and Affiliations

  1. Department of Physics, Kwangwoon University, 447-1 Wolgye-Dong, 139-050, Nowon-Ku, Seoul, Korea

    T. W. Kim

  2. Department of Electronics Engineering, Ajou University, 440-749, Suwon, Korea

    H. Lim

  3. Department of Physics and Astronomy, State University of New York at Buffalo, 14260, NY, USA

    Y. D. Zheng, A. A. Reeder & B. D. Mccombe

Authors
  1. T. W. Kim
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  2. H. Lim
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  3. Y. D. Zheng
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  4. A. A. Reeder
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  5. B. D. Mccombe
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Kim, T.W., Lim, H., Zheng, Y.D. et al. Growth and characterization of Al2O3 insulator gate on p-InP and p-Si by metallorganic chemical vapour deposition at low temperatures. J Mater Sci 27, 5531–5535 (1992). https://doi.org/10.1007/BF00541617

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  • DOI: https://doi.org/10.1007/BF00541617

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