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Highfield effects of layered perovskite ferroelectric thin films

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Abstract

Highfield effects of ferroelectric thin films were studied, taking the system of sandwich structure Pt/SrBi2Ta2O9/Pt (Pt/SBT/Pt) film capacitor as an example. The characterizations and mechanism of leakage current, breakdown and current transient phenomena of ferroelectric thin films were discussed in detail under high electric field. It is found that leakage current mechanism of the films is from space-charge conduction to electrode injection with electric field increasing, that breakdown field of the films has a negative linear variation with the log of the electrode area, and that the characteristics of current transient in the films are not dependent on the polarization reverse. The theoretical analyses were consistent with experimental results.

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Authors and Affiliations

  1. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China

    Pingxiong Yang & Junhao Chu

  2. Shanghai Institute of Metallurgy, Chinese Academy of Sciences, 200050, Shanghai, China

    Hongmei Deng

Authors
  1. Pingxiong Yang
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  2. Hongmei Deng
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  3. Junhao Chu
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Additional information

Project supported by the Scaling Program, the National Natural Science Foundation of China (Grant No. 69738020) and the Venus Project of Shanghai.

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Yang, P., Deng, H. & Chu, J. Highfield effects of layered perovskite ferroelectric thin films. Sci. China Ser. E-Technol. Sci. 41, 502–510 (1998). https://doi.org/10.1007/BF02917025

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  • DOI: https://doi.org/10.1007/BF02917025

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