Abstract
In the last years, different techniques have been proposed to include quantization effects in simulation of electron transport in nanoscale devices. The Effective Potential approach has been demonstrated as a possible correction method for describing these effects in Monte-Carlo device simulation. In this paper we discuss the numerical implementation and the actual ability of this approach to incorporating electrostatic quantum effects in the frame of an existing Monte-Carlo code (MONACO). A new methodology based on a Design-Of-Experiment is proposed for reproducing the Schrödinger-Poisson electron density profile. This original methodology allows to clearly highlight the validity limits of the Effective Potential correction for the description of quantization effects in a double-gate nMOSFET.
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Jaud, MA., Barraud, S., Dollfus, P. et al. Validity of the effective potential approach for the simulation of quantum confinement effects: A Monte-Carlo study. J Comput Electron 5, 171–175 (2006). https://doi.org/10.1007/s10825-006-8839-9
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DOI: https://doi.org/10.1007/s10825-006-8839-9