Skip to main content
SpringerLink
Log in

Annealing effect on the optical and electronic properties of β-Ga2O3/AZO multilayered films

  • Published:
Journal of Materials Science: Materials in Electronics Aims and scope Submit manuscript

Abstract

Beta-gallium oxide/Aluminum-doped zinc oxide (β-Ga2O3/AZO) multilayered films consisting of three bilayers of 100-nm β-Ga2O3 and 400-nm AZO have been successfully prepared on sapphire substrates by magnetron sputtering. The microstructure of the β-Ga2O3/AZO film is investigated in detail using X-ray diffractometer, scanning electron microscope, Energy Dispersive Spectrometer, Hall measurement system and UV–Vis–NIR spectrophotometer. It is found that the optical and electronic properties of the films are manipulated by the annealing temperature. The films annealed at 800 °C exhibit the best properties with the out-of-plane orientation of ZnO (001)||Al2O3 (0001). The Hall mobility of this film is 14.47 cm2 V−1 s−1 and the average transmittance is about 94 %. The optical band gap is 3.25 eV. These results indicate that the β-Ga2O3/AZO multilayered films are appealing candidate for photoelectric device applications.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6
Fig. 7

Similar content being viewed by others

References

  1. Y.F. He, P.G. Tang, J. Li, J.J. Zhang, F.Y. Fan, D.Q. Li, Ultrafast response and recovery ethanol sensor based on SnO2 quantum dots. Mater. Lett. 165, 50–54 (2016)

    Article  Google Scholar 

  2. H. Yang, S. Wang, Y. Yang, Fabrication of metallic ions doped monodispersed porous In2O3 nanospheres. Mater. Lett. 110, 45–48 (2013)

    Article  Google Scholar 

  3. H. Maryama, A. Abbassi, Comparative study of accurate experimentally determined and calculated band gap of amorphous ZnO layers. Mater. Lett. 166, 206–209 (2016)

    Article  Google Scholar 

  4. M. Ramezani, S.M. Hosseinpour-Mashkani, A. Sobhani-Nasab, H.G. Estarki, J. Mater. Sci. Mater. Electron. 26, 7588–7594 (2015)

    Article  Google Scholar 

  5. Y. Cheng, H. Liang, X. Xia, R. Shen, Y. Liu, Y. Luo, G. Du, Effect of growth pressure on the characteristics of β-Ga2O3 films grown on GaAs (1 0 0) substrates by MOCVD method. Appl. Surf. Sci. 325, 258–261 (2015)

    Article  Google Scholar 

  6. O. Masahiro, H. Hidenori, O. Hiromichi, H. Masahiro, H. Hideo, Preparation of highly conductive, deep ultraviolet transparent β-Ga2O3 thin film at low deposition temperatures. Thin Solid Film 411, 134–139 (2002)

    Article  Google Scholar 

  7. X.H. Wang, J.Q. Situ, X.Y. Ying, H. Chen, H.F. Pan, Y. Jin, Y.Z. Du, β-Ga2O3:Cr3+ nanoparticle: a new platform with near infrared photoluminescence for drug targeting delivery and bio-imaging simultaneously. Acta Biomater. 22, 164–172 (2015)

    Article  Google Scholar 

  8. J.H. Yun, N. Duraisamy, M.M.D. Kumar, J. Kim, Optical and electrical properties of AZO/Ni/ITO transparent conductor. Mater. Lett. 143, 215–218 (2015)

    Article  Google Scholar 

  9. J.F. Tang, Y.M. Lu, S.Y. Chun, The growth of AZO nanostructures with high doping concentration using vertical reaction layer synthesizing method and their applications. Sens. Actuat B-Chem. 225, 327–333 (2016)

    Article  Google Scholar 

  10. R. Dhahri, M. Hjiri, L.E. Mir, E. Fazio, F. Neri, F.J. Barreca, ZnO: Ca nanopowders with enhanced CO2 sensing properties. Phys. D Appl. Phys. 48, 255503 (2015)

    Article  Google Scholar 

  11. M. Fahland, P. Karlsson, C. Charton, Low resisitivity transparent electrodes for displays on polymer substrates. Thin Solid Films 392, 334–337 (2001)

    Article  Google Scholar 

  12. A. Goyal, B.S. Yadav, O.P. Thakur, A.K. Kapoor, R.J. Muralidharan, Effect of annealing on β-Ga2O3 film grown by pulsed laser deposition technique. J. Alloys Compd. 583, 214–219 (2014)

    Article  Google Scholar 

  13. S.K. HongK, H.J. Ko, Y. Chen, T. Hanada, T. Yao, Control and characterization of ZnO/GaN heterointerfaces in plasma-assisted MBE-grown ZnO films on GaN/Al2O3. Appl. Surf. Sci. 159, 441–448 (2000)

    Article  Google Scholar 

  14. X.J. Feng, Z. Li, W. Mi, J. Ma, Effect of annealing on the properties of Ga2O3: Mg films prepared on α-Al2O3 (0001) by MOCVD. Vacuum 124, 101–107 (2016)

    Article  Google Scholar 

  15. B. Ayachi, T. Aviles, J.P. Vilcot, C. Sion, Rapid thermal annealing effect on the spatial resistivity distribution of AZO thin films deposited by pulsed-direct-current sputtering for solar cells applications. Appl. Surf. Sci. 366, 53–58 (2016)

    Article  Google Scholar 

  16. Y. Lv, J. Ma, W. Mi, C. Luan, Z. Zhu, H.D. Xiao, Characterization of β-Ga2O3 thin films on sapphire (0001) using metal-organic chemical vapor deposition technique. Vacuum 86, 1850–1854 (2012)

    Article  Google Scholar 

  17. G. Mills, Z.G. Li, M. Dan, Photochemistry and spectroscopy of colloidal arsenic sesquisulfide. J. Phys. Chem. 92, 822–828 (1988)

    Article  Google Scholar 

Download references

Acknowledgments

This work is supported by the National Natural Science Foundation of China (Grant No. 51502203).

Author information

Authors and Affiliations

  1. School of Electronics Information Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, 391 West Binshui Road, Tianjin, 300384, China

    Wei Mi, Kailiang Zhang, Jinshi Zhao & Zhengchun Yang

Authors
  1. Wei Mi
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Kailiang Zhang
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Jinshi Zhao
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Zhengchun Yang
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Wei Mi.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Mi, W., Zhang, K., Zhao, J. et al. Annealing effect on the optical and electronic properties of β-Ga2O3/AZO multilayered films. J Mater Sci: Mater Electron 27, 11390–11395 (2016). https://doi.org/10.1007/s10854-016-5264-0

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s10854-016-5264-0

Keywords

Search

Navigation