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Electrical and Photoelectrical Characteristics of с-Si/Porous–Si/CdS Heterojunctions

  • PHYSICS OF SEMICONDUCTORS AND DIELECTRICS
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Russian Physics Journal Aims and scope

Depending on the sizes of the CdS crystallites and silicon pores, electrical and photoelectrical characteristics of c-Si/porous–Si/CdS heterojunctions prepared by electrochemical deposition and anodization, respectively, are studied. The optimal pore size (10–16 nm) is determined, which provides the maximum photoelectric conversion efficiency (7.71%) of heterojunctions.

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Authors and Affiliations

  1. Baku State University, Baku, Azerbaijan

    H. M. Mamedov, V. U. Mamedov, Kh. M. Ahmedova, V. J. Mamedova, Sh. A. Shamilova, E. A. Khanmamedova & L. E. Agazade

  2. University of Szeged, Szeged, Hungary

    A. Kukevecz & Z. Konya

  3. University of Oulu, Oulu, Finland

    K. Kordas

  4. University of Delaware, Newark, USA

    S. I. Shah

  5. Azerbaijan State University of Economics, Baku, Azerbaijan

    R. M. Rzaev

Authors
  1. H. M. Mamedov
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  2. A. Kukevecz
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  3. Z. Konya
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  4. K. Kordas
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  5. S. I. Shah
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  6. V. U. Mamedov
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  7. Kh. M. Ahmedova
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  8. V. J. Mamedova
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  9. R. M. Rzaev
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  10. Sh. A. Shamilova
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  11. E. A. Khanmamedova
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  12. L. E. Agazade
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Corresponding author

Correspondence to H. M. Mamedov.

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 96–101, September, 2018.

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Mamedov, H.M., Kukevecz, A., Konya, Z. et al. Electrical and Photoelectrical Characteristics of с-Si/Porous–Si/CdS Heterojunctions. Russ Phys J 61, 1660–1666 (2019). https://doi.org/10.1007/s11182-018-1584-2

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  • DOI: https://doi.org/10.1007/s11182-018-1584-2

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