Abstract
The work is mainly to study the thermal stability including the phase stability, microstructure and tribo-mechanical properties of the AlB2-type WB2 and W–B–N (5.6 at.% N) films annealed in vacuum at various temperatures, which are deposited on Si and GY8 substrates by magnetron sputtering. For the WB2 and W–B–N films deposited on Si wafers, as the annealing temperature increases from 700 to 1000 °C, a-WB (700 °C) and Mo2B5-type WB2 (1000 °C) are successively observed in the AlB2-type WB2 films, which show many cracks at the temperature ≥ 800 °C resulting in the performance failure; by contrast, only slight α-WB is observed at 1000 °C in the W–B–N films due to the stabilization effect of a-BN phase, and the hardness increases to 34.1 GPa first due to the improved crystallinity and then decreases to 31.5 GPa ascribed to the formation of α-WB. For the WB2 and the W–B–N films deposited on WC–Co substrates, both the WB2 and W–B–N films react with the YG8 (WC–Co) substrates leading to the formation of CoWB, CoW2B2 and CoW3B3 with the annealing temperature increasing to 900 °C; a large number of linear cracks occur on the surface of these two films annealed at ≥ 800 °C leading to the film failure; after vacuum annealing at 700 °C, the friction performance of the W–B–N films is higher than that of the deposited W–B–N films, while the wear resistance of the WB2 films shows a slight decrease compared with that of the deposited WB2 films.
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This work was supported by the National Natural Science Foundation of China (Nos. 51701157 and 51505378) and the Natural Science Foundation of Shaanxi Province of China (No. 2017JQ5031).
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Liu, YM., Li, T., Liu, F. et al. Thermal Stability of WB2 and W–B–N Films Deposited by Magnetron Sputtering. Acta Metall. Sin. (Engl. Lett.) 32, 136–144 (2019). https://doi.org/10.1007/s40195-018-0864-8
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DOI: https://doi.org/10.1007/s40195-018-0864-8