Abstract
The physical parameters, which describe the relaxation phenomena occurring in both the bulk and contact regions of the systems under investigation, have been calculated using experimental curves of isothermal relaxation of polarization current in thin films of modified (As2Se3)100 − x Bi x . The relation between the change in the internal structure of the studied materials and the processes of charge transfer and charge accumulation has been revealed. The results obtained have been discussed with invoking the relay-race mechanism of charge transfer.
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Original Russian Text © R.A. Castro, G.I. Grabko, 2010, published in Fizika i Khimiya Stekla.
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Castro, R.A., Grabko, G.I. Relaxation phenomena in (As2Se3)100 − x Bi x layers. Glass Phys Chem 36, 566–569 (2010). https://doi.org/10.1134/S1087659610050044
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DOI: https://doi.org/10.1134/S1087659610050044