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Metal-Induced Nickel Silicide Nanowire Growth Mechanism in the Solid State Reaction

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Abstract

A unique nanowire growth was accomplished at 575 oC by metal-induced growth (MIG). That is a spontaneous reaction between metal and Si. The deposited metal worked as a catalyst layer to grow nanowires in the solid-state. Various metals (Ni, Co, and Pd) were used in MIG nanowire fabrication and the Ni-induced case was successful in demonstrating that metal species should be a dominant mover in nanowire growth. Transmission electron microscopy investigation was performed to observe the nanowire growth direction. The Ni to Si composition was studied by energy dispersive spectroscopy showing the Ni diffusion inside the nanowire as well as the Ni silicide layer.

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Authors and Affiliations

  1. Electrical Engineering, University at Buffalo, State University of New York, NY, 14260, Buffalo, USA

    Joondong Kim, Jong-Uk Bae & Wayne A. Anderson

  2. Materials Science and Engineering, Pohang University of Science and Technology, 790-784, Pohang, Korea

    Joondong Kim

  3. Materials Science and Engineering, Seoul National University, 151-742, Seoul, Korea

    Hyun-Mi Kim & Ki-Bum Kim

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  1. Joondong Kim
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  2. Jong-Uk Bae
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Kim, J., Bae, JU., Anderson, W.A. et al. Metal-Induced Nickel Silicide Nanowire Growth Mechanism in the Solid State Reaction. MRS Online Proceedings Library 910, 2107 (2005). https://doi.org/10.1557/PROC-0910-A21-07

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  • DOI: https://doi.org/10.1557/PROC-0910-A21-07

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