Abstract
Self-sustained or explosive crystallization results on a-Si and a-Ge are reviewed and compared, cw laser experiments on a-Si allow to follow all the phenomena encountered, and to experimentally measure the crystallization front velocity. The published theories agree well with the experimental results on a-Si. Moreover, a-Ge presents the same behaviour as a-Si, but for a-Si, the high nucleation rate can induce a specific explosive growth.
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Acknowledgments
We wish to thank V.T. Nguyen for continuous support, J.C. Pfister for fruitful discussions, A. Raharijaona and R. Carré for their technical help.
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Bensahel, D., Auvert, G. Explosive Crystallization in a-Ge and a-Si: A Review. MRS Online Proceedings Library 13, 165–176 (1982). https://doi.org/10.1557/PROC-13-165
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DOI: https://doi.org/10.1557/PROC-13-165