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Effect of Laser Exposure on the Process of Silicon Nanoparticle Fabrication

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Abstract

Silicon nanoparticles are obtained by nanosecond laser ablation of a single-crystal wafer under a deionized water layer. Nanoparticle generation mechanisms are studied depending on the incident energy density of laser radiation (7–12 J/cm2) and scanning speed (10–750 mm/s). At a scanning speed of 150–200 mm/s, a maximum of the extinction coefficient of obtained colloidal solutions of nanoparticles is observed, which can be caused by an increase in their mass yield.

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Authors and Affiliations

  1. Lebedev Physical Institute, Russian Academy of Sciences, Leninskii pr. 53, Moscow, 119991, Russia

    I. N. Saraeva, A. K. Ivanova, S. I. Kudryashov & A. A. Nastulyavichus

  2. National Research Nuclear University “MEPhI”, Kashirskoe sh. 31, Moscow, 115409, Russia

    A. K. Ivanova

  3. National Research University of Information Technologies, Mechanics and Optics, Kronverkskii pr. 49, St. Petersburg, 197101, Russia

    S. I. Kudryashov

Authors
  1. I. N. Saraeva
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  2. A. K. Ivanova
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  3. S. I. Kudryashov
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  4. A. A. Nastulyavichus
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Corresponding author

Correspondence to I. N. Saraeva.

Additional information

Original Russian Text © I.N. Saraeva, A.K. Ivanova, S.I. Kudryashov, A.A. Nastulyavichus, 2018, published in Kratkie Soobshcheniya po Fizike, 2018, Vol. 45, No. 11, pp. 39–42.

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Saraeva, I.N., Ivanova, A.K., Kudryashov, S.I. et al. Effect of Laser Exposure on the Process of Silicon Nanoparticle Fabrication. Bull. Lebedev Phys. Inst. 45, 353–355 (2018). https://doi.org/10.3103/S1068335618110076

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  • DOI: https://doi.org/10.3103/S1068335618110076

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