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Photorefractive Effects in Sn2P2S6

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Photorefractive Materials and Their Applications 2

Part of the book series: Springer Series in Optical Sciences ((SSOS,volume 114))

Abstract

Tin hypothiodiphosphate (Sn2P2S6) is a very promising material for photorefractive applications in the red and near-infrared wavelength range. The main advantage of Sn2P2S6 as an infrared-sensitive photorefractive material is its high beam-coupling gain combined with relatively fast response, about two orders of magnitude faster than in the conventionally used photorefractive material BaTiO3 doped with rhodium. Compared to oxide ferroelectrics, which are wide-band-gap dielectrics, Sn2P2S6 crystals are characterized by a narrower band gap (2.3 eV) and a higher photorefractive sensitivity, and are transparent in the range of 530– 8000 nm.

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Authors and Affiliations

  1. Institute of Solid State Physics and Chemistry, Uzhgorod National University, Uzhgorod, 88000, Ukraine

    Alexander A. Grabar & Yulian M. Vysochanskii

  2. Nonlinear Optics Laboratory, Swiss Federal Institute of Technology, Zurich, 8093, Switzerland

    Mojca Jazbinšek, Germano Montemezzani & Peter Günter

  3. Institute of Physics, National Academy of Sciences, Kiev, 03650, Ukraine

    Alexander N. Shumelyuk

  4. Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS, CNRS UMR 7132), University of Metz and Supélec, Metz, 57070, France

    Germano Montemezzani

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  1. Alexander A. Grabar
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  1. Institute of Quantum Electronics Nonlinear Optics Laboratory, Swiss Federal Institute of Technology, ETH Hoenggerberg HPF E 8, Zurich, CH-8093, Switzerland

    Peter Günter

  2. Thales Research and Technology France, RD 128, Palaiseau Cedex, 91767, France

    Jean-Pierre Huignard

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Grabar, A.A., Jazbinšek, M., Shumelyuk, A.N., Vysochanskii, Y.M., Montemezzani, G., Günter, P. (2007). Photorefractive Effects in Sn2P2S6 . In: Günter, P., Huignard, JP. (eds) Photorefractive Materials and Their Applications 2. Springer Series in Optical Sciences, vol 114. Springer, New York, NY. https://doi.org/10.1007/0-387-34081-5_10

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