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Photorefractive Semiconductors and Quantum-Well Structures

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Photorefractive Materials and Their Applications 2

Part of the book series: Springer Series in Optical Sciences ((SSOS,volume 114))

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Abstract

Photorefractive semiconductors have the advantages of high mobility, high-purity, single-crystal growth, controlled doping with defects, suitability to molecular beam epitaxy with quantum-confinement effects, and strong interband absorption. Bulk crystals have small linear electrooptic coefficients, but they have large quadratic coefficients when operating at wavelengths near the interband absorption. Many new aspects of photorefractive behavior have been discovered in semiconductors, including metastable gratings, magnetooptic effects, excitonic electrooptics, and negative differential resistance.

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  1. D.D. Nolte
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  2. S. Iwamoto
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  3. K. Kuroda
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Editors and Affiliations

  1. Institute of Quantum Electronics Nonlinear Optics Laboratory, Swiss Federal Institute of Technology, ETH Hoenggerberg HPF E 8, Zurich, CH-8093, Switzerland

    Peter Günter

  2. Thales Research and Technology France, RD 128, Palaiseau Cedex, 91767, France

    Jean-Pierre Huignard

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Nolte, D., Iwamoto, S., Kuroda, K. (2007). Photorefractive Semiconductors and Quantum-Well Structures. In: Günter, P., Huignard, JP. (eds) Photorefractive Materials and Their Applications 2. Springer Series in Optical Sciences, vol 114. Springer, New York, NY. https://doi.org/10.1007/0-387-34081-5_11

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