Abstract
The influence of γ-radiation with doses of (104–106 rad) on the threshold voltage and maximum transconductance of p-channel MOS field effect transistors with channel lengths of 0.5–2.0µm prepared by 0.5µm SOI technology has been investigated. A radiation-induced negative charge is built-up in silicon oxide — silicon structures after irradiation with a dose of 104rad for transistors with L>0.9µm. Higher γ-radiation doses caused the building up of positive charge. The negative charge can be thermally annealed at T=315°C and then recovered again after annealing at temperature T=415°C. The positive charge after annealing at T=315°C is significantly reduced. Annealing at T=415°C promotes further reduction of positive charge and the appearance of an effective negative charge for radiation doses of 105rad and for lower channel length after a dose of 106rad. The maximum tranconductance is increased by 15% by irradiation with a dose of 106rad. Subsequent annealing decreases the transconductance in comparison with the initial value (before radiation). The improvement of the MOS transistor parameters after irradiation with low doses (104rad) has been observed. To explain the variety of observed radiation effects a model based on radiation induced defect generation and their annihilation during thermal annealing has been proposed. It takes into account boron-oxygen and phosphorus-oxygen defect centers in SiO2.
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References
T.P. Ma, P.V. Dressendorfer, Ionizing radiation effects in MOS devices and circuits (A Wiley — Interscience Publication, John Wiley & Sons, New York, 1989).
V.G. Litovchenko, V.Ya. Kiblik, R.O. Litvinov, The influence of radiation-thermal treatments on semiconductor structures characteristics. Optoelectronics and Semiconductor Technique 1, 69–73 (1982) (in Russian).
O.Yu. Borkovskaya, N.L. Dmitruk, V.Ya. Kiblik, V.G. Litovchenko, and R.O. Litvinov, Radiation stimulated annealing of structural defects in layer structures based oπ Si and III–V compounds. Acta Physica Hungarica 59(3–4), 327–332 (1986).
I.P. Lisovskii, R.O. Litvinov, V.G. Litovchenko, Effect of radiation ordering in Si-SiO2 structures at ion and plasma-thermal treatments of surface. Poverchnost. Phys. Chem. Mechan. 6, 69–75 (1986) (in Russian).
A.G. Sabnis, Characterization of annealing of 60Co gamma-ray damage at Si-SiO2 interface. IEEE Trans. Nucl. Sci. NS-30, 4094–4099 (1983).
C. Claeys, E. Simoen, V.G. Litovchenko, A. Evtukh, A. Efremov, A. Kizjak, Yu. Rassamakin, Influence of γ-radiation on short channel MOSFETs with thin SiO2 films. In: Progress in SOI Structures and Devices Operating at Extreme Conditions, edited by Balestra F. et al (Kluwer Academic Publ., the Netherlands, 2002), pp.211–220.
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Evtukh, A., Kizjak, A., Litovchenko, V., Claeys, C., Simoen, E. (2005). Radiation Characteristics of Short P- Channel MOSFETs on SOI Substrates. In: Flandre, D., Nazarov, A.N., Hemment, P.L. (eds) Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment. NATO Science Series II: Mathematics, Physics and Chemistry, vol 185. Springer, Dordrecht. https://doi.org/10.1007/1-4020-3013-4_23
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DOI: https://doi.org/10.1007/1-4020-3013-4_23
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