Abstract
This paper is a review of application of porous silicon to SOI technology. Three main approaches for fabricating the SOI structures based on PS are critically reviewed. We show that there exists renewed interest in all these approaches although SOI technology based on layer transfer with PS as the splitting layer is the dominated method. Patent analysis is presented to reveal new potentialities of porous silicon-based SOI technologies.
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Bondarenko, V., Troyanova, G., Balucani, M., Ferrari, A. (2005). Porous Silicon Based SOI: History and Prospects. In: Flandre, D., Nazarov, A.N., Hemment, P.L. (eds) Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment. NATO Science Series II: Mathematics, Physics and Chemistry, vol 185. Springer, Dordrecht. https://doi.org/10.1007/1-4020-3013-4_5
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DOI: https://doi.org/10.1007/1-4020-3013-4_5
Publisher Name: Springer, Dordrecht
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