Abstract
The new and earlier reported results on the effect of hydrostatic pressure (HP, up to 1.23 GPa) and annealing at ≤ 1570 K of oxygen implanted silicon (Si:O) are discussed. HP affects the misfit at the SiOx/Si boundary, solubility and diffusivity of oxygen, the number and dimensions of SiOx precipitates.
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© 2005 Kluwer Academic Publishers
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Misiuk, A., Ratajczak, J., Kątcki, J., Antonova, I. (2005). Impact of Hydrostatic Pressure during Annealing of Si:O on Creation of Simox - Like Structures. In: Flandre, D., Nazarov, A.N., Hemment, P.L. (eds) Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment. NATO Science Series II: Mathematics, Physics and Chemistry, vol 185. Springer, Dordrecht. https://doi.org/10.1007/1-4020-3013-4_9
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DOI: https://doi.org/10.1007/1-4020-3013-4_9
Publisher Name: Springer, Dordrecht
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