Abstract
Amorphous silicon carbon films having near stochiometric composition had been deposited by (i) reactive magnetron sputtering of silicon target in argon-methane gas mixture (a-SiC:H films) and (ii) ion-plasma deposition using polycrystalline silicon carbide as a vacuum arc source (a-SiC films).
Main research objective was focused on peculiarities of the short order structure and electronic properties of a-SiC:H and a-SiC films. It was shown that a-SiC film is more dense and hard in comparison with a- SiC:H. The a-SiC:H films are soft, nanoporous and show visible room temperature photoluminescence. Efficiency of photoluminescence of a- SiC:H can be increased by one order of magnitude by low temperature treatment. It was shown that carbon-hydrogen bonds in Si-C-H structural form play an important role in light absorption and emitting process.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Vasin A.V., Rusavsky A.V., Nazarov.N., Lysenko V.S., Vovk Ya.M., Ivanov V.N., Starik S.P. Structural and electrophysical properties of the amorphous silicon carbide films. Optoelectronics and semiconductor technology 2003; 1: 98–105
Semenov A.V., Lopin A.V., Puzikov V.M. Low temperature deposition and optical properties of nanocrystaline silicon carbide films. Proceedings of the scientific assembly «Films of the diamond and related materials», Kharkov, 2003, p.72–77
Baia Nato A.L., Camargo S.S., Carius R., Finger F., Beyer W. Annealing effects on near stoichiometric a-SiC:H films, Surf. Coat. Tech. 1999;120–121: 395–400
Cui J., Rusli, Yoon S.F., Teo E.J., M.B. Yu, et. al. Effect of radiofrequency bias voltage on the optical and structural properties of hydrogenated amorphous silicon-carbide films. J. Appl. Phys. 2001; 89,11: 6153–6158
Trapeznikova I.N., Kon'kov O.I., Chelnokov V.E., et al. Effect of temperature annealing on the properties of a-Si0.5C0.5:H films. Proc. 5-th Int. Conf. SiC and Related Materials, Washington, DC, 1993, p.125–127
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2005 Springer
About this paper
Cite this paper
Vasin, A. et al. (2005). Comparative Study of Near Stochiometric a-SiC:H and a-SiC Films: Effect of the Bonded Hydrogen. In: Lee, J., Novikov, N., Turkevich, V. (eds) Innovative Superhard Materials and Sustainable Coatings for Advanced Manufacturing. NATO Science Series II: Mathematics, Physics and Chemistry, vol 200. Springer, Dordrecht. https://doi.org/10.1007/1-4020-3471-7_34
Download citation
DOI: https://doi.org/10.1007/1-4020-3471-7_34
Publisher Name: Springer, Dordrecht
Print ISBN: 978-1-4020-3469-5
Online ISBN: 978-1-4020-3471-8
eBook Packages: Chemistry and Materials ScienceChemistry and Material Science (R0)