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Scaling of Ferroelectric-based Memory Concepts

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Materials for Information Technology

Part of the book series: Engineering Materials and Processes ((EMP))

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References

  1. R. Waser (ed.), Nanoelectronics and Information Technology, Wiley, 2003.

    Google Scholar 

  2. S.R. Ovshinsky, Phys. Rev. Lett. 36, 1469 (1968). RAM based on phase-change materials have been introduced by Ovonyx Inc., http://www.ovonyx.com, http://www.ovonic.com; IEDM 2001 Techn. Digest, Session 36, (2001); G. Wicker, SPIE vol. 3891, 2–9, (1999).

    Article  Google Scholar 

  3. International Technology Roadmap for Semiconductors (ITRS), Semiconductor International Association (2003), http://public.itrs.net/

    Google Scholar 

  4. K. Itoh, VLSI Memory Chip Design, Springer series in advanced microelectronics, Springer, Berlin Heidelberg New York, (2001).

    Google Scholar 

  5. A. Nitayama, Y. Kohyama, and K. Hieda, IEDM 1998 Techn. Digest, (1998).

    Google Scholar 

  6. O. Lohse, M. Grossmann, D. Bolten, U. Boettger, R. Waser, MRS Symp. 655, CC 7.6.1 (2001).

    Google Scholar 

  7. J. Junquera and Ph. Ghosez, Nature 422, 508 (2003).

    Article  Google Scholar 

  8. A. Roelofs, T. Schneller, K. Szot, and R. Waser, Nanotechnology 14, 250–253 (2003).

    Article  Google Scholar 

  9. M. Ullmann, PhD thesis, Hamburg (2002).

    Google Scholar 

  10. M. Fitsilis, Y. Mustafa, R. Waser, to be published.

    Google Scholar 

  11. L. Esaki, R.B. Laibowitz and P.J. Stiles, IBM Tech. Disc. Bull. 13 (1971) 2161; L.L. Chang, L.Esaki L, IBM Tech. Disc. Bull. 14 (1971) 1250.

    Google Scholar 

  12. R. Wolf, P.W.M. Blom, and M.P.U. Krijn, U. S. Patent Nr. 5,541,422 (1996).

    Google Scholar 

  13. J. Rodriguez Contreras, H. Kohlstedt, U. Poppe, C. Buchal, N.A. Pertsev and R. Waser, Appl. Phys. Lett. 83 (2003) 495; J. Rodriguez-Contreras, PhD thesis, ISBN 3-89336-368-8 (in English), University of Cologne (2003).

    Google Scholar 

  14. P.W.M. Blom, R.M. Wolf, J.F.M. Cillessen, and M.P.C.M. Krijn, Phys. Rev. Lett., 73, 2107 (1994).

    Article  Google Scholar 

  15. R. Meyer, J. Rodriguez Contreras, A. Petraru, and H. Kohlstedt, accepted by Integrated Ferroelectrics.

    Google Scholar 

  16. Y. Watanabe, J.G. Bednorz, A. Bietsch, Ch. Gerber, D. Widmer, A. Beck, Appl. Phys. Lett. 78 (2001) 3738; C. Rossel, G.I. Meijer, D. Brémaud, D. Widmer, J. Appl. Phys. 90 2892 (2001).

    Article  Google Scholar 

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Author information

Authors and Affiliations

  1. Institut für Festkörperforschung and Center of Nanoelectronic Systems in Information Technology — CNI, Forschungszentrum Jülich, Jülich, Germany

    R. Waser

  2. Institut für Werkstoffe der Elektrotechnik, RWTH Aachen, Aachen, Germany

    R. Waser

Authors
  1. R. Waser
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Editor information

Editors and Affiliations

  1. Materials Analysis Department, AMD Saxony Limited Liability Company & Co. KG, Wilschdorfer Landstraße 101, D-01109, Dresden, Germany

    Ehrenfried Zschech (Dr. rer. nat.) (Dr. rer. nat.)

  2. IMEC, Kapeldreef 75, B-3001, Leuven, Belgium

    Caroline Whelan Ph.D.

  3. Flash Technology Predevelopment, Infineon Technologies SC300, Königsbrücker Straße 180, D-01099, Dresden, Germany

    Thomas Mikolajick (Dr.-Ing.) (Dr.-Ing.)

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© 2005 Springer-Verlag London Limited

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Waser, R. (2005). Scaling of Ferroelectric-based Memory Concepts. In: Zschech, E., Whelan, C., Mikolajick, T. (eds) Materials for Information Technology. Engineering Materials and Processes. Springer, London. https://doi.org/10.1007/1-84628-235-7_14

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  • DOI: https://doi.org/10.1007/1-84628-235-7_14

  • Publisher Name: Springer, London

  • Print ISBN: 978-1-85233-941-8

  • Online ISBN: 978-1-84628-235-5

  • eBook Packages: EngineeringEngineering (R0)

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