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Electrical properties of layered materials in high magnetic fields

  • Magneto-Transport in 2D- and Intercalated Systems
  • Conference paper
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Application of High Magnetic Fields in Semiconductor Physics

Part of the book series: Lecture Notes in Physics ((LNP,volume 177))

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Abstract

The electrical properties, especially the magnetoresistance (MR), of layer-type crystals were measured in high magnetic fields employing stationary and pulsed field magnets. Three topics are presented in this report; (1) anomalous stepwise increase of MR of graphite in increasing fields of several ten teslas at liquid helium temperature, (2) large positive and negative MR in the Anderson localized state in the commensurate CDW phase o£ lT-TaS2 and (3) field-linear MR in several kinds of layer-type crystals such as C6Li, C36K, C48K, C24SbCl5 and lT-LixTaS2 are described and discussed.

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References

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Authors and Affiliations

  1. Institute for Solid State Physics, University of Tokyo Roppongi, Minatoku, 106, Tokyo, Japan

    Sei-ichi Tanuma

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  1. Sei-ichi Tanuma
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G. Landwehr

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© 1983 Springer-Verlag

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Tanuma, Si. (1983). Electrical properties of layered materials in high magnetic fields. In: Landwehr, G. (eds) Application of High Magnetic Fields in Semiconductor Physics. Lecture Notes in Physics, vol 177. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-11996-5_21

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  • DOI: https://doi.org/10.1007/3-540-11996-5_21

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-11996-8

  • Online ISBN: 978-3-540-39472-3

  • eBook Packages: Springer Book Archive

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