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Possible application of the quantized hall resistance to the realization of the electrical units

  • Quantized Hall Effect
  • Conference paper
  • First Online:
Application of High Magnetic Fields in Semiconductor Physics

Part of the book series: Lecture Notes in Physics ((LNP,volume 177))

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Abstract

Precision measurements of the quantized Hall resistance in conjunction with those of other fundamental constants allow other, independent realizations of the SI-unit ohm in addition to the classical one based on a calculable capacitance.

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References

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Author information

Authors and Affiliations

  1. Physikalisch-Technische Bundesanstalt, D-3300, Braunschweig, Germany

    E. Braun, V. Kose, F. Melchert & P. Warnecke

Authors
  1. E. Braun
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  2. V. Kose
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  3. F. Melchert
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  4. P. Warnecke
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Editor information

G. Landwehr

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© 1983 Springer-Verlag

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Braun, E., Kose, V., Melchert, F., Warnecke, P. (1983). Possible application of the quantized hall resistance to the realization of the electrical units. In: Landwehr, G. (eds) Application of High Magnetic Fields in Semiconductor Physics. Lecture Notes in Physics, vol 177. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-11996-5_5

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  • DOI: https://doi.org/10.1007/3-540-11996-5_5

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-11996-8

  • Online ISBN: 978-3-540-39472-3

  • eBook Packages: Springer Book Archive

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