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Production of thin films by controlled deposition of sputtered material

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Sputtering by Particle Bombardment III

Part of the book series: Topics in Applied Physics ((TAP,volume 64))

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Abbreviations

A:

Ion bombarded area

A:

Electron affinity

A BM :

Preexponantial factor of Born-Mayer potential

A O :

Data acquisition area

A d :

Empirical constant

δA:

Fractional damaged area

A′:

Rate constant in Auger neutralization

a′:

Inverse distance

a BM :

Characteristic distance of Born-Mayer potential

B:

Magnetic field strength

B i :

Conversion factor

b:

Empirical exponent

b i :

Characteristic factor in AES

c:

Velocity of light

ci, CM:

Concentration (atomic fraction) of species i or M

cç, cad:

Apparent concentration due to cross-contamination and residual gas adsorption, respectively

D:

Distance between atoms in a crystal direction

D:

Diffusion constant

D S :

Sample-electrode spacing

d:

Drift length or distance from sample

E 0 :

Energy of primary ion or electron

E n :

Energy deposition into nuclear motion

E d :

Threshold displacement energy

E dp :

Mean displacement energy

E f :

Focusing energy

E p :

Most probable energy

E ri :

Energy of (back-)scattered ion

E R :

Energy of reflected ions

ES, Ei:

Energy of sputtered ions

δEσ:

Total energy loss to surrounding lattice

e:

Elementary charge

F ij :

Isotope fractionation ratio

F n :

Nuclear energy deposition per unit depth

f:

Undamaged fraction of bombarded area

f i :

Fraction of atoms in bonding state i

g:

Instrumental factor

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Authors
  1. Edwin D. McClanahan
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Rainer Behrisch Klaus Wittmaack

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McClanahan, E.D., Laegreid, N. (1991). Production of thin films by controlled deposition of sputtered material. In: Behrisch, R., Wittmaack, K. (eds) Sputtering by Particle Bombardment III. Topics in Applied Physics, vol 64. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3540534288_21

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