Abstract
In this review article, we provide a brief overview of current research in the field of silicon spin-based transistors operating at room temperature. This field has branched into two distinct efforts: the first aimed at developing new types of silicon transistors where spin transport, in conjunction with charge transport, is utilized to realize or augment device operation, and the second focused on improving the performance and functionality of complementary metal oxide silicon devices. In this work, we provide a synopsis of these ideas and conclude with a short term prognosis.
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Cahay, M., Bandyopadhyay, S. (2009). Room Temperature Silicon Spin-Based Transistors. In: Koshida, N. (eds) Device Applications of Silicon Nanocrystals and Nanostructures. Nanostructure Science and Technology. Springer, Boston, MA. https://doi.org/10.1007/978-0-387-78689-6_6
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DOI: https://doi.org/10.1007/978-0-387-78689-6_6
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