Abstract
Gallium phosphide is a semiconductor of the III–V type, with the same type of crystal structure as silicon, but with gallium and phosphorus atoms on adjacent sites. Because of its detailed band structure, which is characterised by an indirect band-gap, it is quite different electrically from gallium arsenide, and offers none of the advantages of this material in the high frequency devices discussed in the previous chapter. However, the one important feature is the large band-gap, 2.26 eV at room temperature. This energy is within the range of energies of photons visible to the human eye, 1.77 eV to 3.10 eV, corresponding to the wavelength range 7 000Å to 4 000Å. In consequence, it is possible for the emission of light to result from electron transitions within the material. This fact, coupled with the ability to make p-n junctions, has made GaP the object of much research since Wolff first reported electroluminescence in 1954 (1), in a point contact device in poly crystalline material.
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© 1971 Palgrave Macmillan, a division of Macmillan Publishers Limited
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Hart, P.B. (1971). Gallium Phosphide. In: Waller, W.F. (eds) Electronics Design Materials. Macmillan Engineering Evaluations. Palgrave Macmillan, London. https://doi.org/10.1007/978-1-349-01176-6_16
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DOI: https://doi.org/10.1007/978-1-349-01176-6_16
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