Abstract
In the present contribution, THz pulses were used for investigating carrier dynamics in the narrow-gap semiconductors. The measurement of the optically induced THz pulse absorption transients provided with important insights on the electron energy relaxation in the conduction band. In the second set of experiments THz generation from the surfaces of various semiconductors have been studied and compared. A substantial increase of the emitted THz power from CdHgTe surface was observed after lowering the sample temperature from 300K to 80K.
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References
Krotkus, A, Adomavičius, R, Malevich, V.L.: ‘Terahertz emission from semiconductor surfaces illuminated by femtosecond laser pulses’, Proc. of SPIE Vol. 6257, 62570N 1–12, 2005
Beard, M. C., Turner, G. M., Schmuttenmaer, C. A. : ‘Sub-picosecond carrier dynamics in low-temperature grown GaAs as measured by time-resolved THz spectroscopy’ J. Appl. Phys., 90, 5915–5923, 2001
Adomavičius, R, Molis, G, Krotkus, A, Sirutkaitis, V.: ‘Spectral dependencies of terahertz emission fro InAs and InSb’, App. Phys. Lett., 87, 261101 1–3, 2005
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Adomavičius, R., Šustavičiūtė, R., Krotkus, A. (2008). Picosecond Carrier Dynamics in Narrow-Gap Semiconductors studied by Terahertz Radiation Pulses. In: Murdin, B., Clowes, S. (eds) Narrow Gap Semiconductors 2007. Springer Proceedings in Physics, vol 119. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8425-6_10
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DOI: https://doi.org/10.1007/978-1-4020-8425-6_10
Publisher Name: Springer, Dordrecht
Print ISBN: 978-1-4020-8424-9
Online ISBN: 978-1-4020-8425-6
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