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The Preparation and Properties of Heteroepitaxial Silicon

  • Chapter
Heteroepitaxial Semiconductors for Electronic Devices

Abstract

The heteroepitaxial growth of silicon on refractory oxide substrates is an intriguing technology to the materials scientist. There is some question as to the degree we now understand (or indeed will in the near future understand) the factors promoting or impeding good crystallinity in heteroepitaxial growth.* There is no question, however, as to the value of realizing thin films of “device quality” silicon on insulating substrates. The question is not, “Is it useful?” Rather, the question is, “How similar to bulk silicon can we make heteroepitaxial silicon in the thickness of interest for device application (i.e., 0.5–1 µm)?”

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References

  • Abrahams, M. S. and C. J. Buiocchi, J. Appl. Phys. 45: 3315 (1974).

    ADS  Google Scholar 

  • Abrahams, M. S. and C. J. Buiocchi, Appl. Phys. Letters 27: 325 (1975).

    ADS  Google Scholar 

  • Abrahams, M. S. and C. J. Buiocchi, private communication, RCA Laboratories, Princeton, NJ (1976).

    Google Scholar 

  • Abrahams, M. S., C. J. Buiocchi, R. T. Smith, J. F. Carboy, Jr., J. Blanc, and G. W. Cullen, Appl. Phys. 47, No 12, 5139 (1976).

    Google Scholar 

  • Adamski, J. A., J. Appl. Phys. 36: 1784 (1965).

    ADS  Google Scholar 

  • Aeschlimann, R., F. Gassmann, and T. P. Woodman, Mat. Res. Bull. 5: 167 (1970).

    Google Scholar 

  • Allison, J. F., D. J. Dumin, F. P. Heiman, C. W. Mueller, and P. H. Robinson, Proc. IEEE 57: 1490 (1969).

    Google Scholar 

  • Alper, A. M., R. N. McNally, P. H. Ribbee, and R. C. Doman, J. Am. Ceram. Soc. 45: 263 (1962).

    Google Scholar 

  • Ang, C. Y. and H. M. Manasevit, Solid State Electronics 8: 994 (1965).

    ADS  Google Scholar 

  • Austerman, S. B., J. Nucl. Mat. 14: 225 (1964).

    ADS  Google Scholar 

  • Austerman, S. B., D. K. Smith, and H. W. Newkirk, Crystal Growth (H. S. Peiser, Ed.), London: Pergamon Press (1967), p. 813.

    Google Scholar 

  • Austerman, S. B., M. F. Ehman, and T. B. Johnson, Contract Report No. AFML-TR-72–175, Air Force Materials Laboratory, Wright-Patterson AFB, Ohio (1972).

    Google Scholar 

  • Avigal, Y. and M. Schieber, J. Crystal Growth 9: 127 (1971).

    ADS  Google Scholar 

  • Avigal, Y., Y. David, M. Schieber, and R. Levin, J. Crystal Growth 24/25: 188 (1974).

    Google Scholar 

  • Bardsley, W., G. W. Green, C. H. Holliday, and D. T. J. Hurle, J. Crystal Growth 16: 277 (1972).

    ADS  Google Scholar 

  • Barker, A. S., Jr., Phys. Rev. 132: 1474 (1963).

    ADS  Google Scholar 

  • Bean, K. E. and W. R. Runyan, J. Electrochem. Soc. 121: 284C, Abstract No. 138 (1974).

    Google Scholar 

  • Benzing, W. C., private communication, Applied Materials, Inc., Santa Clara, CA (1974).

    Google Scholar 

  • Benzing, W. C., A. E. Ozias, and I. M. Helmer, Internal Report, Applied Materials, Inc., Santa Clara, CA (1974).

    Google Scholar 

  • Berg, H. M. and E. L. Hall, Paper presented at Electrochemical Society Meeting, Toronto, Canada, 1975; Abstract: J. Electrochem. Soc. 122: 82C (1975); Extended Abstract 75–1, No. 155 (1975).

    Google Scholar 

  • Berman, P. A., Jet Propulsion Lab., Quarterly Tech. Review 2, No. 4 (January 1973).

    Google Scholar 

  • Bicknell, R. W., J. M., Charig, B. A. Joyce, and D. J. Stirland, Phil. Mag. 9: 965 (1964).

    ADS  Google Scholar 

  • Bicknell, R. W., B. A. Joyce, J. H. Neave, and G. V. Smith, Phil. Mag. 14: 31 (1966).

    ADS  Google Scholar 

  • Blanc, J. and M. S. Abrahams, J. Appl. Phys. 47, 5151 (1976).

    ADS  Google Scholar 

  • Blank, J. M. and V. A. Russell, Trans. AIME236: 291 (1966).

    Google Scholar 

  • Boleky, E. J., RCA Review 31: 372 (1970).

    Google Scholar 

  • Boleky, E. J., J. R. Burns, J. E. Meyer, and J. H. Scott, Electronics, July 1970, p. 82.

    Google Scholar 

  • Booker, G. R. and R. Stickler, J. Appl. Phys. 33: 3281 (1962).

    ADS  Google Scholar 

  • Brimm, E. and H. Humphreys, J. Phys. Chem. 61: 829 (1957).

    Google Scholar 

  • Burns, J. and J. Scott, Proc. AFIPS Conf., Fall Joint Computer Conf. 35: 469 (1969).

    Google Scholar 

  • Capell, A., D. Knoblock, L. Mather, and L. Lopp, Electronics, May 26, 1977, p. 99.

    Google Scholar 

  • Chalmers, B., H. E. LaBelle, and A. I. Mlaysky, J. Crystal Growth 13/14: 84 (1972).

    Google Scholar 

  • Chang, C. C., Procedings of Fourth International Materials Symposium, University of California, Berkeley, June 17–21, 1968A.

    Google Scholar 

  • Chang, C. C., J. Appl. Phys. 39 5570 (1968B).

    Google Scholar 

  • Chang, C. C., The Structure and Chemistry of Solid Surfaces (G. A. Somoyai, Ed.) New York: John Wiley and Sons, Inc. (1969).

    Google Scholar 

  • Chang, C. C., J. Vac. Sci. Technol. 8: 500 (1971).

    ADS  Google Scholar 

  • Charvat, F. R., J. C. Smith, and O. H. Nestor, “Crystal Growth,” in Procedings of an International Conference on Crystal Growth, Boston, 1966, New York: Pergamon Press (1967), p. 45.

    Google Scholar 

  • Chiang, Y. S., Semiconductor Silicon, Princeton, NJ: The Electrochemical Society Inc. (1973), p. 285.

    Google Scholar 

  • Chiang, Y. S. and G. W. Looney, J. Electrochem. Soc. 120: 550 (1973).

    Google Scholar 

  • Chiang, Y. S., and D. Richman, Metallurgical Trans. 2, 743 (1971).

    Google Scholar 

  • Chopra, K. I., Thin Film Phenomena, New York: McGraw-Hill Book Co. (1969).

    Google Scholar 

  • Chu, T. L., M. H. Francombe, G. A. Gruber, J. J. Oberly, and R. L. Tallman, Westinghouse Research Laboratory, Rpt. No. AFCRL-65–574, AD61992 (1965).

    Google Scholar 

  • Cockayne, B. and M. Chesswas, J. Mat. Sci. 2: 498 (1967).

    ADS  Google Scholar 

  • Cockayne, B., M. Chesswas, P. J. Born, and J. D. Filby, J. Mat. Sci. 4: 236 (1969).

    ADS  Google Scholar 

  • Cockayne, B., M. Chesswas, and D. B. Gasson, J. Mat. Sci. 2, 7 (1967).

    ADS  Google Scholar 

  • Cocks, P. H. and J. T. A. Pollock, J. Appl. Phys. 43, 3878 (1972).

    ADS  Google Scholar 

  • Corboy, J. F., private communication, RCA Laboratories, Princeton, NJ (1974).

    Google Scholar 

  • Corboy, J. F., private communication (1976).

    Google Scholar 

  • Crossley, P. A., and W. E. Ham, J. Electronic Materials 2, 465 (1973).

    ADS  Google Scholar 

  • Cullen, G. W., J. Crystal Growth 9: 107 (1971).

    ADS  Google Scholar 

  • Cullen, G. W., Paper presented at the IEEE Workshop on Silicon on Sapphire, Vail, Colorado, October 1977.

    Google Scholar 

  • Cullen, G. W. and J. F. Corboy, J. Electrochem. Soc. 121: 1345 (1974).

    Google Scholar 

  • Cullen, G. W. and F. C. Dougherty, J. Crystal Growth 17: 230 (1972).

    ADS  Google Scholar 

  • Cullen, G. W. and J. H. Scott, unpublished, RCA Laboratories, Princeton, NJ (1972).

    Google Scholar 

  • Cullen, G. W. and C. C. Wang, J. Electrochem. Soc. 118: 640 (1971).

    Google Scholar 

  • Cullen, G. W., G. E. Gottlieb, C. C. Wang, and K. H. Zaininger, J. Electrochem. Soc. 116: 1444 (1969).

    Google Scholar 

  • Cullen, G. W., G. E. Gottlieb, and D. Leibowitz, Final Report of Contract No. N00039–69-C-0549, Naval Electronics Systems Command, Dept. of the Navy, Washington, DC, July, 1970A.

    Google Scholar 

  • Cullen, G. W., G. E. Gottlieb, and C. C. Wang, RCA Review 31 355 (1970B).

    Google Scholar 

  • Cullen, G. W., J. F. Corboy, and A. G. Kokkas, Technical Rpt. AFAL-TR-73–200, June, 1973A.

    Google Scholar 

  • Cullen, G. W., S. R. Bolin, A. D. Morrison, and C. C. Wang, U.S. Patent 3,736,158, May, 1973B.

    Google Scholar 

  • Cullen, G. W., J. F. Corboy, and R. T. Smith, J. Crystal Growth 31,274 (1975A).

    Google Scholar 

  • Cullen, G. W., S. R. Bolin, J. Creamer, J. F. Corboy, and A. J. Wasielewski, U.S. Patent 3,883,313, May 13, 1975B.

    Google Scholar 

  • Cullis, A. G., Ph.D. Thesis, University of Oxford, 1972.

    Google Scholar 

  • Culls, A. G. and G. R. Booker, Thin Solid Films. 31 53 (1976).

    ADS  Google Scholar 

  • Cutter, I. A. and R. McPherson, J. Am. Ceram. Soc. 56: 266 (1973).

    Google Scholar 

  • Deines, J. L. and A. Spiro, Paper presented at Electrochemical Society Meeting, San Francisco, California (1974); Abstract: J. Electrochem. Soc. 121: 91C (1974); Extended Abstract 74–1, No. 161 (1974).

    Google Scholar 

  • Dell’Oca, C. J., and H. Nonnenmacher, Paper presented at Electrochemical Society Meeting, New York, 1974; Abstract: J. Electrochem. Soc. 121: 285C (1974); Extended Abstract 74–2, No. 146 (1974).

    Google Scholar 

  • Dexter, D. L. and F. Seitz, Phys. Rev. 86, 964 (1952).

    ADS  Google Scholar 

  • Dixon, M. T. and J. P. Willis, AEI Central Res. Lab. Rpt. No. 6, Nov. 1967, Rugby, England.

    Google Scholar 

  • Djevahirdjian, M. V., Swiss Pat. 354,428, July 15, 1961.

    Google Scholar 

  • Dobrovinskaya, E. R., A. N. Galagurya, and L. A. Litvinov, Soy. Phys.-Solid State 12: 1460 (1970).

    Google Scholar 

  • Druminski, M., Paper presented at the Electrochemical Society Meeting, Las Vegas, Nevada, October, 1976.

    Google Scholar 

  • Druminski, M. and Ch. Kühl, Paper presented at Fundamentals of Epitaxy Conference, Erlangen, Germany, 1974.

    Google Scholar 

  • Druminski, M. and H. Schlötterer, J. Crystal Growth 17: 249 (1972).

    ADS  Google Scholar 

  • Druminski, M. and Cl. Wieczorek, Paper presented at Electrochemical Society Meeting, Toronto, Canada, 1975; Abstract: J. Electrochem. Soc. 122: 82C (1975); Extended Abstract 75–1, No. 154 (1975).

    Google Scholar 

  • Druminski, M., Ch., Kühl, E. Preuss, F. Schwidefsky, J. Tihanyi, and K. Schmid, J. Electrochem. Soc. 121: 284C, Abstract No. 139 (1974).

    Google Scholar 

  • Druminski, M., Ch. Kühl, E. Preuss, F. Schwidefsky, H. Splittgerber, and D. Takacs, Proceedings of the 7th Conference on Solid State Devices, Tokyo, Japan, 1975; Japanese J. Appl. Phys. 15: 217 (1976).

    Google Scholar 

  • Duffy, M. T. and P. J. Zanzucchi, Paper presented at Elec- trochemical Society Meeting, Las Vegas, NA, 1976.

    Google Scholar 

  • Duffy, M. T., P. J. Zanzucchi, and G. W. Cullen, Contract N. 5–35915, National Bureau of Standards, Washington, D.C., Report No. 2, October, 1975.

    Google Scholar 

  • Duffy, M. T., P. J. Zanzucchi, and G. W. Cullen, Reports of Contract No. 5–35915, National Bureau of Standards, Washington, DC 20234, 1975–1977.

    Google Scholar 

  • Dumin, D. J., J. Appl. Phys. 36: 2700 (1965).

    Google Scholar 

  • Dumin, D. J., Rev. Sci. Inst. 38 1107 (1967A).

    Google Scholar 

  • Dumin, D. J., J. Appl. Phys. 38 1909 (1967B).

    Google Scholar 

  • Dumin, D. J., Solid State Electronics 13: 415 (1970).

    ADS  Google Scholar 

  • Dumin D J, J. Vac. Sci. Technol. 8: 235 (1971).

    ADS  Google Scholar 

  • Dumin, D. J., Paper presented at Electrochemical Society Meeting, New York, 1974; Abstract: J. Electrochem. Soc. 121: 284C (1974); Extended Abstract 74–2, No. 137 (1974).

    Google Scholar 

  • Dumin, D. J. and P. H. Robinson, J. Appl. Phys. 39 2759 (1968A).

    Google Scholar 

  • Dumin, D. J. and P. H. Robinson, J. Crystal Growth 3/4 214 (1968B).

    Google Scholar 

  • Dumin, D. J. and E. C. Ross, J. Appl. Phys. 41: 3139 (1970).

    ADS  Google Scholar 

  • Dumin, D. J. and R. S. Silver, Solid State Electronics 11: 353 (1968).

    ADS  Google Scholar 

  • Dumin, D. J., P. H. Robinson, G. W. Cullen, and G. E. Gottlieb, RCA Review 31: 620 (1970).

    Google Scholar 

  • Eernisse, E. P. and C. B. Norris, Solid State Electronics 16: 315 (1972).

    ADS  Google Scholar 

  • Oman, M. F., Paper presented at Electrochemical Society Meeting, Boston, M., 1973; Abstract: J. Electrochem. Soc. 120: 244C (1973); Extended Abstract 73–2, No. 198 (1973).

    Google Scholar 

  • Elliot, A. B. M. and J. C. Anderson, Solid State Electronics 15: 531 (1972).

    ADS  Google Scholar 

  • Estrup, P. J. and E. G. McRae, Surface Science 25: 1 (1971).

    Google Scholar 

  • Eversteijn, F. C., Philips Res. Reports 26: 134 (1971).

    Google Scholar 

  • Eversteijn, F. C., and H. L. Peek, Philips Res. Reports 25: 472 (1970).

    Google Scholar 

  • Eversteijn, F. C., P. J. W. Severin, C. H. J. v.d. Brekel, and H. L. Peek, J. Electrochem. Soc. 117: 925 (1970).

    Google Scholar 

  • Faktor, M. M., D. G. Fiddyment, and G. R. Newns, J. Electrochem. Soc. 114: 356 (1967).

    Google Scholar 

  • Falckenberg, R., J. Crystal Growth 13, 14: 718 (1972).

    ADS  Google Scholar 

  • Falckenberg, R., J. Crystal Growth 29: 195 (1975).

    ADS  Google Scholar 

  • Falckenberg, R., J. Electrochem. Soc. 123: 63 (1976).

    Google Scholar 

  • Farrington, D., J. Electrochem. Soc. 121: 285C, Abstract No. 145 (1974).

    Google Scholar 

  • Faust, J. W., Jr., Surface Science 13: 60 (1969).

    ADS  Google Scholar 

  • Filby, J. D., J. Electrochem. Soc. 113: 1085 (1966).

    Google Scholar 

  • Filby, J. D., Modern Oxide Materials (B. Cockayne and D. W. Jones, Eds.), London and New York: Academic

    Google Scholar 

  • Press, (1972), p. 203.

    Google Scholar 

  • Filby, J. D. and S. Nielsen, Brit. J. Appl. Phys. 18: 1357 (1967).

    ADS  Google Scholar 

  • Flatley, D. W. and W. E. Ham, Paper presented at Electrochemical Society Meeting, New York, 1974; Abstract: J. Electrochem. Soc. 121: 290C (1974); Extended Abstract 74–2, No. 198 (1974).

    Google Scholar 

  • Fraimbault, J. L., I. Gyomlai, R. Montmory, and J. Vuillod, Proceedings of International Symposium of the Basic Problem Thin Film Physics, Goettingen, Germany (1965) p. 638.

    Google Scholar 

  • Frenkel, D. R. and J. A. Venables, Advances in Physics 19: 409 (1970).

    ADS  Google Scholar 

  • Garcia, M., J. F. Bresse, and B. Blanchard, Paper presented at the Third European Devices Research Conference, Munich, Germany, Abstract A4. 1, p. 828, 1973.

    Google Scholar 

  • Gassmann, F., A. Della Casa, and R. Aeschlimann, Mat. Res. Bull. 6: 817 (1971).

    Google Scholar 

  • Gassmann, F., R. Aeschlimann, and U. Bänziger, Mat. Res. Bull. 7: 1493 (1972).

    Google Scholar 

  • Gottlieb, G. E., Ph.D. Thesis, Rutgers University, 1971.

    Google Scholar 

  • Gottlieb, G. E., J. Crystal Growth 12: 327 (1972).

    MathSciNet  ADS  Google Scholar 

  • Gottlieb, G. E. and J. F. Corboy, J. Crystal Growth 17: 261 (1972).

    ADS  Google Scholar 

  • Gottlieb, G. E., J. F. Corboy, G. W. Cullen, and J. H. Scott, Metallurgical Trans. 2: 653 (1971).

    Google Scholar 

  • Grabmaier, J. G. and C. Watson, Phys. Stat. Sol. 25 K7 (1968A).

    Google Scholar 

  • Grabmaier, J. G. and C. Watson, Z. Angew. Phys. 24 108 (1968B).

    Google Scholar 

  • Grabmaier, J. G. and C. Watson, J. Am. Ceram. Soc. 51 355 (1968C).

    Google Scholar 

  • Green, J. M., J. Electrochem. Soc. 119: 1765 (1972).

    Google Scholar 

  • Green, A. K., J. Dancy, and E. Bauer, J. Vac. Sci. Technol. 7: 159 (1970).

    ADS  Google Scholar 

  • Gross, U. and R. Kersten, J. Crystal Growth 15: 85 (1972).

    ADS  Google Scholar 

  • Grove, A. S., Physics and Technology of Semiconductor Devices, New York: John Wiley and Sons, Inc. (1967), p. 300.

    Google Scholar 

  • von Grube, G., A. Schneider, U. Esch, and M. Flad, Z. Anorg. Chem. 260: 120 (1949).

    Google Scholar 

  • Gunn, S. R., J. Phys. Chem. 65: 779 (1961).

    Google Scholar 

  • Gupta, D. C., Solid State Electronics 13: 543 (1970).

    ADS  Google Scholar 

  • Haidinger, W., B. Zega, H. Steiner, and M. Pongratz, International Conference on Physics. Chemistry of Semiconductor Heterojunctions and Layer Structures; Budapest, Hungary, October, 1970.

    Google Scholar 

  • Ham. W. E., Appl. Phys. Letters 21: 440 (1972).

    Google Scholar 

  • Ham, W. E., Electron Device Conference, Washington, DC, 1973.

    Google Scholar 

  • Ham, W. E., Paper presented at Electrochemical Society Meeting, New York, 1974; Abstract: J. Electrochem. Soc. 121: 285C (1974); Extended Abstract 74–2, 144 (1974).

    Google Scholar 

  • Ham, W. E., private communication, RCA Laboratories, Princeton, NJ (1975).

    Google Scholar 

  • Hammond, M. R., Recent newspaper presented at Electrochemical Society Meeting, Detroit, Mich., 1969; Abstract: J. Electrochem. Soc. 116: 376C (1969).

    Google Scholar 

  • Harrington, W., C. W. Magee, G. W. Cullen, and J. F. Corboy, Proceedings of the 24th Annual Conference on Mass Spectrometry and Allied Topics, San Diego, California, May, 1976.

    Google Scholar 

  • Hart, P. B., P. J. Etter, B. W. Jervis, and J. M. Flanders, Brit. J. Appl. Phys. 18: 1389 (1967).

    ADS  Google Scholar 

  • Hasegawa, S., N. Kaminaka, T. Nakamura, and T. Itoh, J. Appl. Phys. 40: 4620 (1969).

    ADS  Google Scholar 

  • Heiman, F. P., IEEE Trans. Electron Devices ED-13: 855 (1966).

    Google Scholar 

  • Heiman, F. P., IEEE Trans. Electron Devices ED-14: 781 (1967).

    Google Scholar 

  • Heiman, F. P. and P. H. Robinson, Solid State Electronics 11: 411 (1968).

    ADS  Google Scholar 

  • Heywang, W., Mat. Res. Bull. 3: 315 (1968).

    Google Scholar 

  • Higson, G. R., J. Sci. Instr. 41: 405 (1964).

    ADS  Google Scholar 

  • Hockey, B. J., The Science of Ceramic Machining and Surface Finishing (S. J. Schneider, Jr. and R. W. Rice, Eds.) NBS Special Publication 348 (1972A), p. 119.

    Google Scholar 

  • Hockey, B. J., Proc. No. 20, Publ. of the Brit. Ceramic Soc. (1972B), p. 95.

    Google Scholar 

  • Hofstein, S. R., IEEE Trans. Electron Devices ED-13, 846 (1966).

    Google Scholar 

  • Horiuche, S., Solid State Electronics 18: 1111 (1975).

    ADS  Google Scholar 

  • Howie, A. and Z. S. Basinski, Phil. Mag. 17: 1039 (1968).

    ADS  Google Scholar 

  • Huff, H. R. and R. R. Burgess, Eds., Semiconductor Silicon 1973,2nd International Symposium on Silicon Materials

    Google Scholar 

  • Science and Technology, May 13–18, 1973, Electrochemical Society Meeting, Chicago.

    Google Scholar 

  • Hughes, A. J., J. Appl. Phys. 46: 2849 (1975).

    ADS  Google Scholar 

  • Hughes, A. J. and A. C. Thorsen, J. Appl. Phys. 44: 2304 (1973).

    ADS  Google Scholar 

  • Hynecek, J., J. Appl. Phys. 45 2631 (1974A).

    Google Scholar 

  • Hynecek, J., J. Appl. Phys. 45 2806 (1974B).

    Google Scholar 

  • Ipri, A. C., Appl. Phys. Letters 20: 1 (1972A).

    Google Scholar 

  • Ipri, A. C., J. Appl. Phys. 43 2770 (1972B).

    Google Scholar 

  • Ipri, A. C. and D. W. Flatley, IEEE Trans. Electron Devices, September, 1110 (1976).

    Google Scholar 

  • Ipri, A. C. and J. C. Sarace, IEEE International Solid State Circuits Conference Digest of Technical Papers, Paper No. WPM6. 3, p. 58 (1974).

    Google Scholar 

  • Ipri, A. C. and J. C. Sarace, IEEE J. Solid State Circuits SC-11, 329 (1976).

    Google Scholar 

  • Ipri, A. C. and J. N. Zemel, J. Appl. Phys. 44: 744 (1973).

    ADS  Google Scholar 

  • Itoh, T., S. Hasegawa, and N. Kaminaka, J. Appl. Phys. 40: 2597 (1969).

    ADS  Google Scholar 

  • Jona, F., Appl. Phys. Letters 9: 253 (1966).

    Google Scholar 

  • Joyce, B. A., J. Crystal Growth 314: 43 (1968).

    ADS  Google Scholar 

  • Joyce, B. A., Rep. Prog. Phys. 37: 363 (1974).

    ADS  Google Scholar 

  • Joyce, B. A. and R. R. Bradley, J. Electrochem. Soc. 110: 1235 (1963).

    Google Scholar 

  • Joyce, B. A., R. J. Bennett, R. W. Bicknell, and P. J. Etter, Trans. AIME 233: 556 (1965).

    Google Scholar 

  • Kamins, T. I. and T. R. Cass, Thin Solid Films 16: 147 (1973).

    ADS  Google Scholar 

  • Kamins, T. I. and E. S. Meieran, J. Appl. Phys. 44: 5064 (1973).

    ADS  Google Scholar 

  • Kane, P. F. and G. B. Larrabee, Characterization of Semiconductor Materials, Texas Institute Electronics Series, New York: McGraw-Hill Book Co. (1970), p. 182.

    Google Scholar 

  • Koepke, B. G., The Science of Ceramic Machining and Surface Finishing (S. J. Schneider, Jr. and R. W. Rice, Eds.) NBS Special Publication 348 (1972), p. 119.

    Google Scholar 

  • Kranzer, D., Appl. Phys. Letters 25: 103 (1974).

    ADS  Google Scholar 

  • Krause, H., Phys. Stat. Sol. (A) 1: K53 (1970).

    ADS  Google Scholar 

  • Kroko, L. J. and G. L. Shaw, Semiconductor Silicon (R. R. Haberecht and E. L. Kern, Eds.) New York: The Electrochemical Society (1969) p. 316.

    Google Scholar 

  • Kühl, Ch., H. Schlötterer, and F. Schwidefsky, J. Electrochem. Soc. 121: 1496 (1974).

    Google Scholar 

  • Kühl, Ch., M. Druminski, and K. Wittmaack, Thin Solid Films. 37,317 (1976A).

    Google Scholar 

  • Kühl, Ch., H. Schlötterer, and F. Schwidefsky, J. Electrochem. Soc. 123 97 (1976B).

    Google Scholar 

  • Kuhn, G. L. and C. J. Rhee, J. Electrochem. Soc. 120: 1563 (1973).

    Google Scholar 

  • Kyle, T. R. and G. Zydzik, Mat. Res. Bull. 8: 443 (1973).

    Google Scholar 

  • LaBelle, H. E., Jr., U.S. Patent 3,591,348 (1971A).

    Google Scholar 

  • LaBelle, H. E., Jr., Mat. Res. Bull. 6 581 (1971B).

    Google Scholar 

  • LaBelle, H. E., Jr. and A. I. Mlaysky, U.K. Patent 1,205,544, June 9, 1969.

    Google Scholar 

  • LaBelle, H. E., Jr. and A. I. Mlaysky, Mat. Res. Bull. 6: 571 (1971).

    Google Scholar 

  • LaBelle, H. E., Jr., G. F. Hurley, and A. D. Morrison, Reports under Contract No. DAAB05–72-C-5841, U.S. Army Electronics Command, Philadelphia, PA (1973/ 74).

    Google Scholar 

  • LaChapelle, T. J., A. Miller, and F. L. Morritz, Progress in Solid State Chemistry (H. Riess, Ed.), New York: Pergamon Press (1967), p 1.

    Google Scholar 

  • Larssen, P. A., Acta Cryst. 20: 599 (1966).

    Google Scholar 

  • Latanision, R. M., Paper presented at the International Conference on Surface Technology, May, 1973.

    Google Scholar 

  • Lawson, R. W. and D. M. Jefkins, J. Physics D: Appl. Physics 3: 1627 (1970).

    ADS  Google Scholar 

  • Lee, Chia-Chuan and K. Hu, Paper presented at Electrochemical Society Meeting, Toronto, Canada, 1975; Abstract: J. Electrochem. Soc. 122: 85C (1975); Extended Abstract 75–1, No. 177 (1975).

    Google Scholar 

  • Lindstrom, G. A., U.S. Patent 3,321,872, May 30, 1967.

    Google Scholar 

  • Linnington, P. F., Proceedings 7th International Conference Electron Microscopy, Grenoble, France, Vol. 2, p. 447 (1970).

    Google Scholar 

  • Linnington, P. F., Procedings of the 25th Anniversary Meeting, EMAG, Institute of Physics, Cambridge, England, (1971) p. 182.

    Google Scholar 

  • Linnington, P. F., Ph.D. Thesis, Cavendish Laboratory, Cambridge, England (1974).

    Google Scholar 

  • Lucarini, V. J., R. L. Bratter, and J. E. Basso, Paper presented at Electrochemical Society Meeting, San Francisco, CA, 1974; Abstract: J. Electrochem. Soc. 121: 91C (1974); Extended Abstract 74–1, 164 (1974).

    Google Scholar 

  • MacKenzie, J. M. W., Minerals Sci. Engng. 3: 25 (1971).

    Google Scholar 

  • Manasevit, H. M., U.S. Patent 3,414,434, December 3, 1968A.

    Google Scholar 

  • Manasevit, H. M., J. Electrochem. Soc. 115 434 (1968B).

    Google Scholar 

  • Manasevit, H. M., J. Crystal Growth 22: 125 (1974).

    ADS  Google Scholar 

  • Manasevit, H. M., Paper presented at Electrochemical Society Meeting, Toronto, Canada (1975); Abstract: J. Electrochem. Soc. 122: 82C (1975); Extended Abstract 75–1, No. 153 (1975).

    Google Scholar 

  • Manasevit, H. M. and D. H. Forbes, J. Appl. Phys. 37: 734 (1966).

    ADS  Google Scholar 

  • Manasevit, H. M. and F. L. Morritz, J. Electrochem. Soc. 114: 204 (1967).

    Google Scholar 

  • Manasevit, H. M. and W. I. Simpson, J. Appl. Phys. 35: 1349 (1964).

    ADS  Google Scholar 

  • Manasevit, H. M. and A. C. Thorsen, Heteroepitaxial GaAs on Aluminum Oxide. I-Nucleation Studies, NASA Contract No. NAS12–2010.

    Google Scholar 

  • Manasevit, H. M. and W. I. Simpson, Recentnews paper, American Physical Society, Edmonton, Canada (1963).

    Google Scholar 

  • Manasevit, H. M., A. Miller, F. L. Morritz, and R. Nolder, Trans. AIME 233: 540 (1965).

    Google Scholar 

  • Manasevit, H. M., D. H. Forbes, and I. B. Cadoff, Trans. AIME 236: 275 (1966).

    Google Scholar 

  • Manasevit, H. M., R. L. Nolder, and L. A. Moudy, Trans. AIME 242: 465 (1968).

    Google Scholar 

  • Manasevit, H. M., F. M. Erdmann, and A. C. Thorsen, J. Electrochem. Soc. 121: 284C, Abstract No. 140 (1974).

    Google Scholar 

  • Manasevit, H. M., F. M. Erdmann, and A. C. Thorsen, J. Electrochem. Soc. 123: 52 (1976).

    Google Scholar 

  • Matthews, J. W. (Ed.), Epitaxial Grwoth, Parts A and B, New York: Academic Press (1975).

    Google Scholar 

  • Maurits, J. E. A., J. Electrochem. Soc. 121: 284C, Abstract No. 136, (1974).

    Google Scholar 

  • Maurits, J. E. A., Paper presented at the Electrochemical Society Meeting, Las Vegas, Nevada, October, 1976.

    Google Scholar 

  • Maurits, J. E. A., and A. M. Hawley, Advances in X-Ray Analysis (Heinrich, Barrett, Newkirk, and Rund, Eds.), Vol. 15, New York: Plenum Publish. Corp. (1971), p. 516.

    Google Scholar 

  • Mayer, S. E. and D. E. Shea, J. Electrochem. Soc. 111: 550 (1964).

    Google Scholar 

  • McGreivy, P. J. and C. R. Viswanathan, Appl. Phys. Letters 25: 505 (1974).

    ADS  Google Scholar 

  • Mendelson, S., J. Appl. Phys. 39: 2477 (1967).

    ADS  Google Scholar 

  • Menter, J. W. and D. W. Pashley, The Structure and Properties of Thin Films New York: John Wiley and Sons, Inc. (1959).

    Google Scholar 

  • Mercier, J., Rev. Physique Appliquee 3: 127 (1968).

    Google Scholar 

  • Mercier, J., J. Eleetrochem. Soc. 117 666 (1970A).

    Google Scholar 

  • Mercier, J., J. Electrochem. Soc. 117 812 (1970B).

    Google Scholar 

  • Mercier, J., J. Electrochem. Soc. 118: 962 (1971).

    Google Scholar 

  • Mercier, J., Internal Report, Grenoble, France. Messineo, P. J., private communication, RCA Laboratories, Princeton, NJ (1975).

    Google Scholar 

  • Miller, A., Electronics 40: 171 (1967).

    Google Scholar 

  • Miller, A. and H. M. Manasevit, J. Vac. Sci. Technol. 3, 68 (1966).

    ADS  Google Scholar 

  • Moss, H. I., private communication, RCA Laboratories, Princeton, NJ (1973).

    Google Scholar 

  • Mueller, C. W., J. Vac. Sci. Technol. 7: 147 (1970).

    MathSciNet  ADS  Google Scholar 

  • Mueller, C. W. and P. H. Robinson, Proc. IRE 52: 1487 (1964).

    Google Scholar 

  • Mustachi, A., private communication, RCA Laboratories, Princeton, NJ (1974).

    Google Scholar 

  • Naber, C. T. and J. E. O’Neal, Trans. AIME 242: 470 (1968).

    Google Scholar 

  • Namba, S., A. Kawazu, and T. Maruyama, Sci. Pap. Inst. Phys. Chem. Res. (Tokyo) 61 45 (1967A).

    Google Scholar 

  • Namba, S., A. Kawazu, and T. Maruyama, Procedings of the Second Colloquium on Thin Films, Budapest, Hungary, 1967B, p. 213.

    Google Scholar 

  • Nolder, R. L. and I. B. Cadoff, Trans. AIME 233: 549 (1965).

    Google Scholar 

  • Nolder, R. L., D. J. Klein, and D. H. Forbes, J. Appl. Phys. 36: 3444 (1965).

    ADS  Google Scholar 

  • Norris, C. B., Appl. Phys. Letters 20: 187 (1972).

    ADS  Google Scholar 

  • Novak, R. E., (RCA Laboratories, Princeton, NJ), private communication (1976).

    Google Scholar 

  • Oh, H. L., K. P. L. Oh, S. Vaidyanathan, and I. Finale, The Science of Ceramic Machining and Surface Finishing (S. J. Schneider, Jr., and R. W. Rice, Eds.) NBS Special Publication 348 (1972) p. 119.

    Google Scholar 

  • Paladino, A. E. and B. D. Roiter, J. Am. Ceram. Soc. 47: 465 (1964).

    Google Scholar 

  • Pashley, D. W., Advances in Physics 14: 327 (1965).

    ADS  Google Scholar 

  • Patterson, D. L., private communication, RCA Laboratories, Princeton, NJ (1974).

    Google Scholar 

  • Peel, J. L. and M. D. Barry, Paper presented at the 18th Annual Electronic Materials Conference on the Preparation and Properties of Electronic Materials, Metallurgical Society of the AIME, Salt Lake City, Utah, June, 1976.

    Google Scholar 

  • Picraux, S. T., Appl. Phys. Letters 20: 91 (1972).

    ADS  Google Scholar 

  • Picraux, S. T., J. Appl. Phys. 44: 587 (1973).

    ADS  Google Scholar 

  • Picraux, S. T. and G. J. Thomas, J. Appl. Phys. 44: 594 (1973).

    ADS  Google Scholar 

  • Pödör, B., phys. stat. sol. (a) 16, K167 (1966).

    Google Scholar 

  • Podor, B., Phys. Stat. Sol. (A)2: K197 (1970).

    Google Scholar 

  • Porter, J. L. and R. G. Wolfson, J. Appl. Phys. 36: 2746 (1965).

    ADS  Google Scholar 

  • Powell, C. F., J. H. Oxley, and J. M. Blocher, Jr., Vapor Deposition, New York: John Wiley and Sons, Inc. (1966).

    Google Scholar 

  • Rabinowicz, E., Scientific American (June): 91 (1968).

    Google Scholar 

  • Raetzel, C. and J. Tihanyi, Siemens RD Reports 1, No. 3, 307 (1972).

    Google Scholar 

  • Raetzel, C., S. Schild, and H. Schlotterer, J. Electrochem. Soc. 121: 284C, Abstract No. 142 (1974).

    Google Scholar 

  • Rai-Choudhury, P., Y. C. Kao, and G. G. Sweeney, J. Electrochem. Soc. 121 1509 (1974A).

    Google Scholar 

  • Rai-Choudhury, P., D. K. Schroder, T. M. S. Heng, and G. G. Sweeney, Paper presented at Electrochemical Society Meeting, New York, NY, 1974, Abstract: J. Electrochem. Soc. 121: 284C, No. 143 (1974); Extended Abstract 74–2, 339 (1974B).

    Google Scholar 

  • Redfield, D., IEEE Trans. Parts, Hybrids, and Packaging PHP-10: 239 (1974).

    Google Scholar 

  • Redfield, D., private communication, RCA Laboratories, Princeton, NJ (1975).

    Google Scholar 

  • Reisman, A., M. Berkenblit, J. Cuomo, and S. A. Chan, J. Electrochem. Soc. 118: 1653 (1971).

    Google Scholar 

  • Reynolds, F. H. and A. B. M. Elliott, Phil. Mag. 13: 1073 (1966).

    ADS  Google Scholar 

  • Reynolds, F. H. and A. B. M. Elliott, Solid State Electronics 10: 1093 (1967).

    ADS  Google Scholar 

  • Ricard, J., private communication, Ugine Kuhlmann, Grenoble, France (1975).

    Google Scholar 

  • Ricard, J. and A. Cisccolaini, J. Crystal Growth 13, 14: 718 (1972).

    ADS  Google Scholar 

  • Richman, D. and R. Arlett, J. Electrochem. Soc. 116: 872 (1969).

    Google Scholar 

  • Richman, D., Y. S. Chiang, and P. H. Robinson, RCA Review 31: 613 (1970).

    Google Scholar 

  • Robinson, P. H. and D. J. Dumin, J. Electrochem. Soc. 115: 75 (1968).

    Google Scholar 

  • Robinson, P. H. and F. P. Heiman, J. Electrochem. Soc. 118: 141 (1971).

    Google Scholar 

  • Robinson, P. H. and C. W. Mueller, Trans. AIME 236: 268 (1966).

    Google Scholar 

  • Robinson, P. H. and R. O. Wance, RCA Review 34: 616 (1973).

    Google Scholar 

  • Ronen, R. and P. H. Robinson, Proc. IEEE 59. 1506 (1971).

    Google Scholar 

  • Ronen, R. and P. H. Robinson, J. Electrochem. Soc. 119: 747 (1972).

    Google Scholar 

  • Rosenblatt, A., Electronics, April 10, 1972, p. 77.

    Google Scholar 

  • Ross, E. C., and G. Warfield, J. Appl. Phys. 40: 2339 (1969).

    ADS  Google Scholar 

  • Rubin, J. J. and L. G. Van Uitert, Mat. Res. Bull. 1: 211 (1966).

    Google Scholar 

  • Ruth, R. P., A. J. Hughes, J. L. Kenty, H. M. Manasevit, D. Medellin, A. C. Thorsen, Y. T. Chan, C. R. Viswanathan, and M. A. Ring, Final Report under Contract No. DAAH01–70-C-1311, ARPA Order No. 1585 (1973).

    Google Scholar 

  • Safdar, M., G. H. Frischat, and H. Salge, J. Am. Ceram. Soc. 57: 106 (1974).

    Google Scholar 

  • Sahagian, C. S., Air Force Cambridge Research Laboratories Rpt. No. 66–659, Physical Sciences Research Paper No. 268, September 1966.

    Google Scholar 

  • Sahagian, C. S. and M. Schieber, Procedings of Symposium on Crystal Growth, 7th International Crystallography Congress, Moscow, July, 1966.

    Google Scholar 

  • Sahagian, C. S. and M. Schieber, Growth of Crystals, Vol. VII (N. N. Sheftal’, Ed.) New York: Consultants Bureau (1969) p. 183.

    Google Scholar 

  • Salama, C. A. T., T. W. Tucker, and L. Young, Solid State Electronics 10: 339 (1967).

    ADS  Google Scholar 

  • Sarace, J. C. and A. C. Ipri, Paper presented at Electrochemical Society Meeting, New York, 1974; Abstract: J. Electrochem Soc. 121: 290C (1974); Extended abstract 74–2, No. 197 (1974).

    Google Scholar 

  • Scheuplein, R. and P. Gibbs, J. Am. Ceram. Soc. 43: 458 (1960).

    Google Scholar 

  • Schlötterer, H., IEEE European Meeting on Semiconductor Device Research, Bad Nauheim, Germany, April, 1967.

    Google Scholar 

  • Schlötterer, H., Solid State Electronics 11: 947 (1968).

    ADS  Google Scholar 

  • Schlötterer, H., Electronics, October 27, 1969, p. 113.

    Google Scholar 

  • Schlötterer, H., Procedings of the International Conference on Physical Chemistry of Semiconductor Heterojunctions and Layered Structures, Budapest, Hungary, 1970, p. IV - 5.

    Google Scholar 

  • Schlötterer, H., Paper presented at the American Vacuum Society Meeting, Philadelphia, PA, 1975; J. Vac. Sci. and Technol. 13: 29 (1976).

    Google Scholar 

  • Schlötterer, H. and Ch. Zaminer, Phys. Stat. Sol. 15: 399 (1966).

    ADS  Google Scholar 

  • Schmid, F., J. Crystal Growth 26: 162 (1974).

    ADS  Google Scholar 

  • Schmid, F., Paper presented at Electrochemical Society Meeting, Toronto, Canada, 1975; Abstract: J. Electrochem. Soc. 122: 90C (1975); Extended Abstract 75–1, No. 222 (1975).

    Google Scholar 

  • Schmid, F. and D. J. Viechnicki, J. Am. Ceram. Soc. 53: 528 (1970).

    Google Scholar 

  • Schmid, F. and D. J. Viechnicki, Solid State Tech., Sept., X XX (1973).

    Google Scholar 

  • Schmidt, W. A. and J. E. Davey, The Science of Ceramic Machining and Surface Finishing (S. J. Schneider, Jr. and R. W. Rice, Eds.) NBS Special Publication 348 (1972), p. 259.

    Google Scholar 

  • Schneider, H. G. and V. Ruth, Advances in Epitaxy and Endotaxy, Leipzig: VEB Deutscher Verlag fur Grundstoffindustrie (1971).

    Google Scholar 

  • Schneider, S. J., Jr. and R. W. Rice (Eds.), The Science of Ceramic Machining and Surface Finishing, NBS Special Publication 348 (1972).

    Google Scholar 

  • Schroder, D. K. and P. Rai-Choudhury, Appl. Phys. Letters 22: 445 (1973).

    ADS  Google Scholar 

  • Scott, J. H. and J. R. Burns, Paper presented at the Electrochemical Society Meeting, Los Angeles, CA, 1970; Abstract: J. Electrochem. Soc. 117: 101C (1970); Extended Abstract 70–1, No. 138 (1970).

    Google Scholar 

  • Scott, J. H. and A. C. Ipri, private communication (1977). Seiter, H. and Ch. Zaminer, Z. Angew. Phys. 20: 158 (1965).

    Google Scholar 

  • Seiter, H. and Ch. Zaminer, U.S. Patent 3,424,955, January, 1969.

    Google Scholar 

  • Seiter, H., E. Sirti, and Ch. Zaminer, Procedings 128th Electrochemical Society Meeting, Buffalo, 1965.

    Google Scholar 

  • Shakh-Budagov, A. L. and A. V. Stepanov, Summary of the 1950 report of the Leningrad Physico-Technical Institute, Acad. Sci. USSR.

    Google Scholar 

  • Sirti, E. and A. Adler, Z. Metallkunde 52: 529 (1961).

    Google Scholar 

  • Sladek, K. J., J. Electrochem. Soc. 118: 654 (1971).

    Google Scholar 

  • Stadnik, A. V., V. E. Kosenko, V. I. Poludin, and N. M. Torchun, Poluprov. Tekh. Mikroelektron., No. 10: 74 (1972).

    Google Scholar 

  • Stein, H. J., Solid State Electronics 15: 1209 (1972).

    ADS  Google Scholar 

  • Stepanov, A. V., Summary of the 1941 report of the Leningrad Physico-Technical Institute, Acad. Sci. USSR. Stowell, M. J., Thin Films 1: 55 (1968).

    Google Scholar 

  • Strepkoff, S. J., LeVide No. 2, Special A.V.I. SEM, p. 52, Oct. (1966).

    Google Scholar 

  • Swain, M. V., R. M. Latanision, and A. R. C. Westwood, J. Am. Ceram. Soc. 9: 372 (1975).

    Google Scholar 

  • Sylwestrowicz, W. D., Phil. Mag. 7: 1825 (1962).

    ADS  Google Scholar 

  • Tallman, R. L., T. L. Chu, G. A. Gruber, J. J. Oberly, and E. D. Wolley, J. Appl. Phys. 37: 1588 (1966).

    ADS  Google Scholar 

  • Tamura, M. and M. Nomura, Appl. Phys. Letters 11: 196 (1966).

    ADS  Google Scholar 

  • Tanikawa, E., O. Takayama, and K. Maeda, Paper presented at Electrochemical Society Meeting, Boston, MA, 1973; Abstract: J. Electrochem. Soc. 120: 247C (1973); Extended Abstract 73–2, 569 (1973).

    Google Scholar 

  • Thorsen, A. C. and A. J. Hughes, Appl. Phys. Letters 21: 579 (1972).

    ADS  Google Scholar 

  • Tihanyi, J., Siemens Forsch. und Entwickl. Ber. 1, Nr. 3 /72: 263 (1972).

    Google Scholar 

  • Tihanyi, J., Paper presented at the European Solid State Device Conference, Munich, Germany, 1973.

    Google Scholar 

  • Trilhe, J., H. Legal, and G. Rolland, Paper presented at the Third International Conference on Vapour Growth and Epitaxy, Amsterdam, The Netherlands, 1975. Tsivinskii, S. V., Soy. Phys.-Crystallogr. 12: 119 (1967).

    Google Scholar 

  • Tsivinskii, S. V. and A. V. Stepanov, Soy. Phys.-Solid State 7: 148 (1965).

    Google Scholar 

  • van der Pauw, L. J., Philips Res. Reports 13: 1 (1958).

    Google Scholar 

  • van Dijk, H. J. and J. de Jonge, J. Electrochem. Soc. 117: 533 (1970).

    Google Scholar 

  • van Nielen, J. A., M. J. J. Theunissen, and J. A. Appels, Philips Tech. Rev. 31: 271 (1970).

    Google Scholar 

  • Via, G. G. and R. E. Thun, Procedings American Vacuum Society Meeting, New York, 1962.

    Google Scholar 

  • Viechnicki, D. J. and F. Schmid, J. Crystal Growth 11: 345 (1971).

    ADS  Google Scholar 

  • Viechnicki, D. J., F. Schmid, and J. W. McCauley, J. Appl. Phys. 43: 4508 (1972).

    ADS  Google Scholar 

  • Viechnicki, D. J., F. Schmid, and J. W. McCauley, Technical Report No. AMMRC TR 73–3, February, 1973.

    Google Scholar 

  • Walsh, R. J. and A. H. Herzog, U.S. Patent 3,170,273, February, 1965.

    Google Scholar 

  • Wang, C. C., J. Appl. Phys. 40: 3433 (1969).

    ADS  Google Scholar 

  • Wang, C. C. and G. W. Cullen, J. Electrochem. Soc. 121; Abstract No. 141 (1974).

    Google Scholar 

  • Wang, C. C., G. E. Gottlieb, G. W. Cullen, S. H. McFarlane, and K. H. Zaininger, Trans. AIME 245: 441 (1969).

    Google Scholar 

  • Weisberg, L. R., J. Appl. Phys. 33: 1817 (1962).

    ADS  Google Scholar 

  • Weisberg, L. R. and E. A. Miller, Trans. AIME 242: 479 (1968).

    Google Scholar 

  • Weitzel, C. W. and R. T. Smith, Paper presented at Electrochemical Society Meeting, Las Vegas, Nevada (1976).

    Google Scholar 

  • Westwood, A. R. C. and D. L. Goldheim, J. Am. Ceram. Soc. 53: 142 (1970).

    Google Scholar 

  • Westwood, A. R. C. and R. M. Latanision, The Science of Ceramic Machining and Surface Finishing (S. J. Schneider, Jr., and R. W. Rice, Eds.) NBS Special Publication 348 (1972) p. 119.

    Google Scholar 

  • Westwood, A. R. C., N. H. MacMillan, and R. S. Kalyoncu, J. Am. Ceram. Soc. 56: 258 (1973).

    Google Scholar 

  • Yasuda, Y., Japanese J. Appl. Phys. 7: 1171 (1968).

    ADS  Google Scholar 

  • Yasuda, Y., Japanese J. Appl. Phys. 10: 45 (1971).

    ADS  Google Scholar 

  • Yasuda, Y. and Y. Ohmura, Japanese J. Appl. Phys. 8: 1098 (1969).

    ADS  Google Scholar 

  • Zaminer, Ch., Z. Angew, Phys. 24, No. 4 (1968).

    Google Scholar 

  • Zeveke, T. A., L. N. Kornev, and V. A. Tolomasov, Soy. Phys.-Crystallogr. 13 (3): 493 (1968) [in English].

    Google Scholar 

  • Zanzucchi, P. J., M. T. Duffy, and R. C. Alig, J. Electrochem. Soc., 125, 299 (1978).

    Google Scholar 

  • Zinnes, A. E., B. E. Nevis, and C. D. Brandle, J. Crystal Growth 19: 187 (1973).

    ADS  Google Scholar 

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Cullen, G.W. (1978). The Preparation and Properties of Heteroepitaxial Silicon. In: Cullen, G.W., Wang, C.C. (eds) Heteroepitaxial Semiconductors for Electronic Devices. Springer, New York, NY. https://doi.org/10.1007/978-1-4612-6267-1_2

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