Abstract
The knowledge of intersubband lifetimes is important for the design of intersubband based emitters and detectors. In wide GaAs/AlGaAs quantum wells, where the intersubband spacing is smaller than the optical phonon energy, rather long lifetimes are expected, consistent with intersubband relaxation by acoustic phonon scattering and Auger processes. However, this has not always been found to be the case, and lifetimes ranging from 20ps1 to 1.6ns2 have been determined using several different experimental techniques1–4. From a saturation experiment a lifetime of 600ps2 was estimated in a quantum well of width 400 Å, while with a pump/probe technique we have directly measured a lifetime of 40ps in a sample of well width 270 Å 3. In experiments where the carriers were produced by photoexcitation, lifetimes of 20ps1 and 325ps4 were determined in different experiments on samples of well widths about 210 Å.
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© 1996 Plenum Press, New York
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Murdin, B.N. et al. (1996). Time-Resolved Studies of Intersubband Relaxation Using the free Electron Laser. In: Hess, K., Leburton, JP., Ravaioli, U. (eds) Hot Carriers in Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0401-2_8
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DOI: https://doi.org/10.1007/978-1-4613-0401-2_8
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