Abstract
The latest generation of intermediate-voltage high-resolution electron microscopes (HREMs) offer the exciting prospect of resolution limits of 2Å or better [1,2]. Moreover, under certain well-defined conditions, it is even possible to deduce useful structural details down to small fractions of this limit [3–5], and some limited chemical information can also be extracted. In this paper, the potentialities and limitations of the high-resolution technique will be considered, with particular reference to edge-on interfaces and defects in various elemental and compound semiconductors. Specific examples described include: i the identification of crystal polarity in <110>-orientated sphalerite materials; ii intensity variations across <100> GaAs/Ga1-xAlxAs interfaces; iii stacking fault symmetry and dislocations; iv refinement of the diamond <100> platelet defect; v distinguishing shuffle and glide models for the Si 30° partial dislocation. Prospects and practical problems associated with the HREM technique, as it applies to imaging semiconductors, are briefly discussed.
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Cowley, J.M. and Smith, D.J., 1987, Acta Cryst., A43:737.
Smith, D.J., 1988, J. Electr. Micro. Techn., in press.
Wood, G.J., Stobbs, W.M. and Smith, D.J., 1984, Phil. Mag. A50:375.
Stobbs, W.M., Wood, G.J. and Smith, D.J., 1984, Ultramicroscopy 14:145.
Saxton, W.O. and Smith, D.J., 1985, Ultramicroscopy 18:39.
Hetherington, C.J.D., Barry, J.C., Bi, J.M., Humphreys, C.J., Grange, J., Wood, C., 1985, Mater. Res. Soc. Symp. Proc. 37:41.
Gjonnes, J. and Moodie, A.F., 1965, Acta Cryst. 19:65.
Glaisher, R.W., Spargo, A.E. and Smith, D.J., 1989, Ultramicroscopy, in press.
Bourret, A., Desseaux, J. and Renault, A., 1975, Acta Cryst. A31:746.
Glaisher, R.W., Spargo, A.E. and Smith, D.J., 1989, Ultramicroscopy, in press.
Smith, D.J., Glaisher, R.W. and Lu, P., 1989, Phil. Mag. Letts., in press.
O’Keefe, M.A. and Pitt, A.J., 1980, in Electron Microscopy 1980 (ed. P. Brederoo and G. Boom) Vol. 1:122.
Glaisher, R.W. and Spargo, A.E.C., 1985, Ultramicroscopy, 18:323.
Wright, A.C., Ng, T.L. and Williams, J.O., 1988, Phil. Mag. Letts. 57:107.
Smith, D.J., Bursill, L.A. and Wood, G.J., 1984, Ultramicroscopy, 16:19.
Glaisher, R.W., to be published.
Smith, D.J., Saxton, W.O., O’Keefe, M.A., Wood, G.J. and Stobbs, W.M., 1983, Ultramicroscopy, 11:263.
Olsen, A. and Spence, J.C.H., 1981, Phil. Mag. A43:945.
Hornstra, J., 1958, Phys. Chem. Solids, 5:129.
Bourret, A., Desseaux, J. and D’Anterroches, C., 1981, Inst. Phys. Conf. Ser., 60:9.
Anstis, G.R., Hirsch, P.B., Humphreys, C.J., Hutchison, J.L. and Ourmazd, A., 1981, Inst. Phys. Conf. Ser., 60:23.
Barry, J.C. and Alexander, H., 1987, in Proc. 45th Ann. Meet. EMSA (ed. G.W. Bailey, San Francisco Press, San Francisco) pp. 242–243.
Raman, C.V. and Nilakantan, P., 1940, Proc. Indian Acad. Sci., All:389.
Barry, J.C., Bursill, L.A. and Hutchison, J.L., 1985, Phil. Mag., A51:15.
Humble, P., Lynch, D.F. and Olsen, A., 1985, Phil. Mag., A52:623.
Barry, J.C., 1986, in Proc. Xlth Int. Cong, on Electron Microscopy, Kyoto, pp. 799–800.
Kilaas, R. and Gronsky, R., 1985, Ultramicroscopy 16:193.
Gibson, J.M. and McDonald, M.L., 1987, Mater. Res. Soc. Symp. Proc.82:109.
Ponce, F.A., Suzuki, Kobayashi, H., Ishibashi, Y., Ishida, Y. and Eto, T., 1986, in Proc. 44th Ann. Meet. EMSA (ed. G.W. Bailey, San Francisco) pp. 606–609.
Petford-Long, A.K. and Smith, D.J., 1986, Phil. Mag. A54:837.
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Glaisher, R.W., Barry, J.C., Smith, D.J. (1989). HREM of Edge-on Interfaces and Defects. In: Cherns, D. (eds) Evaluation of Advanced Semiconductor Materials by Electron Microscopy. NATO ASI Series, vol 203. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0527-9_1
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DOI: https://doi.org/10.1007/978-1-4613-0527-9_1
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