Abstract
Various photo-induced effects in chalcogenide glasses have been reported until now.l,2 Chalcogenide glasses have a flexible structure because of the presence of lone pair electrons of chalcogen atoms and the low average coordination number. As a result, (1) defects in these glasses have a negative effective electron correlation energy, resulting in positively and negatively charged defect centers, D+ and D−, at equilibrium and (2) these glasses undergo a reversible photo-structural change known as a photo-darkening by a cycle of illumination and annealing.
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References
K. Tanaka, Photo-Induced Phenomena in Amorphous Semiconductors, in: “Fundamental Physics of Amorphous Semiconductors,” F. Yonezawa, ed., Springer- Verlag, New York (1981).
A. E. Owen, A. P. Firth and P. J. S. Ewen, Photo-Induced Structural and Physico-Chemical Changes in Amorphous Chalcogenide Semiconductors, Philos. Mag. B 52: 347 (1985).
S. G. Bishop, U. Strom and P. C. Taylor, Optically Induced Metastable Paramagnetic States in Amorphous Semiconductors, Phys. Rev. B 15: 2278 (1977).
R. A. Street and N. F. Mott, States in the Gap in Glassy Semiconductors, Phys. Rev. Lett. 35: 1293 (1975).
M. Kumeda, G. Kawachi and T. Shimizu, Photoconductivity and Photoluminescence and Their Relation to Light-Induced ESR in (Ge0.42s0.58)l-x(sb0.4s0.6)x glasses, Philos. Mag. B 51: 591 (1985).
T. Shimizu, M. Kumeda, I. Watanabe and Y. Nakagaki, Photo-Induced ESR and Optical Absorption Edge Shift in Amorphous Ge-S Films, Solid State Commun. 27: 223 (1978), (errata; ibid. 29: 315 (1979)).
K. Arai and H. Namikawa, ESR in Ge-S Glasses, Solid State Commun. 13: 1167 (1973).
T. Shimizu, Nature of Defects in Amorphous Ge-S and Si-N, J. Non-Cryst. Solids 71: 145 (1985).
D. K. Biegelsen and R. A. Street, Photoinduced Defects in Chalcogenide Glasses, Phys. Rev. Lett. 44: 803 (1980).
J. M. Chamberlain and A. J. Moseley, Long-Term Photoluminescence Fatigue in GeySe1-y Glasses, J. Phys. C 16: 1987 (1983).
N. Kumagai, J. Shirafuji and Y. Inuishi, Photo-Induced ESR and Its Annealing Behavior in Melt-Quenched Ge-S Glasses, Jpn. J. Appl. Phys. 23: 1287 (1984).
T. Shimizu, N. Ishii and M. Kumeda, Weak Bonds in Amorphous Semiconductors, in: “Tetrahedrally-Bonded Amorphous Semiconductors,” D. Adler and H. Fritzsche, ed., Plenum, New York (1985).
M. Kumeda, H. Yokomichi, A. Morimoto and T. Shimizu, Light-Induced Effects and Their Annealing Behavior in a-Si:H, Jpn. J. Appl. Phys. 25: Part 2, No. 8 (1986).
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© 1987 Plenum Press, New York
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Shimizu, T., Kawachi, G., Kumeda, M. (1987). Photo-Induced Effects in Amorphous Ge-S. In: Kastner, M.A., Thomas, G.A., Ovshinsky, S.R. (eds) Disordered Semiconductors. Institute for Amorphous Studies Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1841-5_21
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DOI: https://doi.org/10.1007/978-1-4613-1841-5_21
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