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Self-assembled Quantum Dots: From Stranski–Krastanov to Droplet Epitaxy

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Self-Assembly of Nanostructures

Part of the book series: Lecture Notes in Nanoscale Science and Technology ((LNNST,volume 12))

Abstract

The results of investigation of InAs QDs in Al(Ga)As matrix grown by Stranski–Krastanov method and droplet epitaxy are presented. The atomic and energy structure of InAs/AlAs QDs was investigated in different growth conditions for Stranski–Krastanov method, and the coexistence of direct and indirect band structures is revealed. However, the lack of carrier transfer due to the low quality of a heterointerface and high concentration of nonradiative recombination centers is challenging. To overcome these problems, we used droplet epitaxy. As QD density in droplet epitaxy is determined by nucleation, we studied the initial stage of homoepitaxy in model system of GaAs to analyze nucleation processes. A proposed statistical approach is also very effective to describe InAs/GaAs QD formation in Stranski–Krastanov mode. The array of In metal droplets on the GaAs surface is studied as an initial stage of droplet epitaxy, and a model of droplet evolution is proposed. Indium dose dependence of QD properties reveals a critical phenomenon of a growth mode transition. Finally high-quality \( {\hbox{InAs/A}}{{\hbox{l}}_{{{0}{.9}}}}{\hbox{G}}{{\hbox{a}}_{{{0}{.1}}}}{\hbox{As}} \) QDs structures with a perfect heterointerface and high efficiency of the carrier capture from wetting layer to QDs were grown by droplet epitaxy.

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Notes

  1. 1.

    The large size dispersion appears also as a large linewidth (FWHM achieves 180 meV) of the QDs PL band. In our case, the FWHM of PL bands and, therefore, dispersion are in several times larger than for InAs/GaAs QDs (see, e.g.: [79–82].)

  2. 2.

    Composition of QDs form at fixed temperature with a \( {t_{\rm{GI}}} \) determines via linear interpolation between the minimal and the maximal values of \( {t_{\rm{GI}}} \). The interruption times correspond to QDs with compositions, x equal to 0.1n, where n can be taken from 4 to 10, were selected as reference points for each \( {T_{\rm{g}}} \). Then the points with equal composition x are connected by B-spline lines.

  3. 3.

    In order to select PL of a single QD in array the samples studied in [56] were covered by an aluminum mask containing small square apertures fabricated by electron beam lithography.

  4. 4.

    It was recently demonstrated that type I In(Ga)As/GaAs QDs exhibit a red shift of the PL band with increasing excitation density. This effect was observed for a QDs array [107]. Besides, for a single QD increasing excitation density leads to appearance of additional PL bands red shifted relatively the X\( _0 \) excitonic transition [108]. The relative intensity of these bands strongly increases with increasing excitation power density [109]. These bands were explained in terms of the recombination of multiparticle neutral and charged excitons (see, e.g., [110, 111]). In our case, a red shift is due to the appearance of additional low energy PL bands with high FWHM.

  5. 5.

    Rise time of PL is similar in structure with a separate thin QW and in structure with QDs (In(Ga)As/GaAs, InAs/InP, and GaAs/AlGaAs) equals to several tens of picosecond (see [148–151]). Therefore, one can assume similar probability of carriers capture from matrix to QW and QDs.

  6. 6.

    Longtime PL decay in the InAs/AlAs QDs observed in this investigation demonstrates that carriers captured in QDs recombine via photon emission only. Actually, we demonstrated recently in the [53] that even a small part (∼5%) of QDs with nonradiative centers decreases the duration of QDs PL decay down to about 1 μs due to the long-range transfer of the exciton energy to the nonradiative centers.

  7. 7.

    The large difference in the prolonged recombination decay of localized carriers in the wetting layer and QDs is explained by k-conservation rule. Both the QDs and wetting layer have similar energy structure with the lowest electronic level at the XXY minimum of the conduction band (see [57, 117]). The k-conservation rule is applied for weakly localized carriers in the wetting layer, where the carriers recombine mainly via scattering on phonons (see [57]); however, this rule is broken in QDs, where, as we have shown in [117], faster no-phonon recombination dominates.

  8. 8.

    According to the calculation of the InAs/AlAs QDs energy structure made in our recent study [117], the energy of electron localization in an array of QDs varies from 70 to 150 meV. The latter value is close to the activation energy of the QD band quenching.

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Acknowledgment

This work has being partially supported by RFBR via Grants 10-02-00513 and 10-08-00851.

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Authors and Affiliations

  1. A.V. Rzhanov Institute of Semiconductor Physics SB RAS, Pr. Lavrentieva, 13, 630090, Novosibirsk, Russia

    Yu. G. Galitsyn, A. A. Lyamkina, S. P. Moshchenko, T. S. Shamirzaev, K. S. Zhuravlev & A. I. Toropov

  2. Novosibirsk State University, Pirogova 2, 630090, Novosibirsk, Russia

    A. A. Lyamkina

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  1. Yu. G. Galitsyn
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  3. S. P. Moshchenko
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    Stefano Bellucci

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Galitsyn, Y.G., Lyamkina, A.A., Moshchenko, S.P., Shamirzaev, T.S., Zhuravlev, K.S., Toropov, A.I. (2012). Self-assembled Quantum Dots: From Stranski–Krastanov to Droplet Epitaxy. In: Bellucci, S. (eds) Self-Assembly of Nanostructures. Lecture Notes in Nanoscale Science and Technology, vol 12. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-0742-3_3

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