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POSFET Touch Sensing Devices: Bias Circuit Design Based on the ACM MOS Transistor Compact Model

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Sensors and Microsystems

Part of the book series: Lecture Notes in Electrical Engineering ((LNEE,volume 109))

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Abstract

In this article we present a common-drain floating gate bias circuit design for POSFET (Piezoelectric Oxide Semiconductor Field Effect Transistor) touch sensing devices. A graphical-aided methodology, intended to furnish a criterion that assures the selection of the most appropriate bias resistance value, is presented

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References

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Acknowledgment

This work is supported by the European Commission Project ROBOSKIN (Grant No. ICT-FP7–231500). The research leading to these results has received funding from European Community’s 7th framework “People” specific programme – Marie Curie Actions – under grant agreement PCOFUND–GA–2008–226070.

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Correspondence to M. Valle .

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Barboni, L., Valle, M., Dahiya, R.S. (2012). POSFET Touch Sensing Devices: Bias Circuit Design Based on the ACM MOS Transistor Compact Model. In: D’Amico, A., Di Natale, C., Mosiello, L., Zappa, G. (eds) Sensors and Microsystems. Lecture Notes in Electrical Engineering, vol 109. Springer, Boston, MA. https://doi.org/10.1007/978-1-4614-0935-9_32

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  • DOI: https://doi.org/10.1007/978-1-4614-0935-9_32

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  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4614-0934-2

  • Online ISBN: 978-1-4614-0935-9

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