Abstract
In this chapter, a review of uniaxial s-Si MOSFET physics, modeling issues and approaches has been done. The semi analytical model developed in this chapter shows an increase of electron mobility with the applied uniaxial strain at a given electrical field.
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Notes
- 1.
The text/figures/equations/references etc. associated with [215] have been republished/reorganized from the paper [215] Amit Chaudhry, Sonu Sangwan and Jatindra Nath Roy, “Modeling of Some Electrical Parameters of a MOSFET under Uniaxial Stress”, Journal of Computational Electronics, Vol.10, No.4, pp. 437–442, 2011 with due permission from the publisher.
- 2.
The text/figures/equations/references etc. associated with [221] have been republished from the paper [221] Amit Chaudhry, Sonu Sangwan and Jatindra Nath Roy, “Mobility Modeling in a p-MOSFET Under Uniaxial Stress”, Elektrotehniski Vestnik, Vol. 78, No. 5, pp. 298–303,2011 with due permission from the publisher.
- 3.
The text/figures/equations/references etc. associated with [225] have been republished/reorganized from the paper [225] Amit Chaudhry, Sonu Sangwan and Jatindra Nath Roy, “Threshold Voltage and Drain Current Modeling of Uniaxial Strained p-MOSFETs”, Journal of Nano and Electronic Physics, Vol.3, No.4, pp. 27–31, 2011.with due permission from the publisher.
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Chaudhry, A. (2013). Uniaxial s-Si Technology. In: Fundamentals of Nanoscaled Field Effect Transistors. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-6822-6_7
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DOI: https://doi.org/10.1007/978-1-4614-6822-6_7
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